发明授权
- 专利标题： Sic single crystal and method for growing the same
- 专利标题（中）： Sic单晶和生长方法相同
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申请号： US10069503申请日： 2002-02-27
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公开(公告)号： US06660084B1公开(公告)日： 2003-12-09
- 发明人: Hiromu Shiomi , Tsunenobu Kimoto , Hiroyuki Matsunami
- 申请人： Hiromu Shiomi , Tsunenobu Kimoto , Hiroyuki Matsunami
- 优先权： JP11-251572 19990906
- 主分类号： C30B2502
- IPC分类号： C30B2502
摘要：
A method of growing a 4H-poly type SiC single crystal 40, characterized in that the 4H-poly type SiC single crystal 40 is grown on a seed crystal 30 comprised of an SiC single crystal where a {03-38} plane 30u or a plane which is inclined at off angle &agr;, within about 10°, with respect to the {03-38} plane, is exposed.