Disclosed herein is an inner tube for CVD apparatus which is made of glass-like carbon. This inner tube has good heat resistance and good corrosion resistance. It also has an inside surface for good adhesion with CVD film constituents. Therefore, it hardly contaminates silicon wafers during the production of semiconductors. The inner tube is characterized by a specific coefficient of thermal expansion, a specific surface roughness of its inside surface, a specific oxygen/carbon atomic ratio (O/C) of its inside surface, and a specific I(D)/I(G) ratio of its inside surface, where I(D) is a peak intensity representing the C—C bond of diamond-like structure and I(G) is a peak intensity representing the C—C bond of graphite-like structure.