发明授权
- 专利标题： Method of inducing movement of charge carriers through a semiconductor material
- 专利标题（中）： 引起载流子通过半导体材料的移动的方法
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申请号： US10219211申请日： 2002-08-15
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公开(公告)号： US06660537B1公开(公告)日： 2003-12-09
- 发明人: Peter J. Hopper , Philipp Lindorfer , Kyuwoon Hwang
- 申请人： Peter J. Hopper , Philipp Lindorfer , Kyuwoon Hwang
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
A conductive trace is formed over and insulated from a region of semiconductor material, such as a region adjacent to the n+ region of an n+/p− photodiode, and a sawtooth current is made to flow through the conductive trace. The sawtooth current induces charge carriers to move through the semiconductor material to a collection region in the semiconductor material.
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