- 专利标题: Semiconductor device and a manufacturing method thereof
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申请号: US10280117申请日: 2002-10-23
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公开(公告)号: US06660541B2公开(公告)日: 2003-12-09
- 发明人: Masatoshi Kanamaru , Yoshishige Endo , Takanori Aono , Ryuji Kohno , Hideyuki Aoki
- 申请人: Masatoshi Kanamaru , Yoshishige Endo , Takanori Aono , Ryuji Kohno , Hideyuki Aoki
- 优先权: JP2001-324324 20011023
- 主分类号: H01L2166
- IPC分类号: H01L2166
摘要:
A method of manufacturing a semiconductor device includes forming process of forming a semiconductor element on a semiconductor wafer and testing process of testing electrical performance of the formed semiconductor element. The testing process includes process of electrically connecting a testing apparatus to an electrode pad formed on the semiconductor element to be tested. The testing apparatus has a probe-formed substrate including a plurality of beams having probes to be electrically connected to the electrode pads. The probe-formed substrate has a first beam having at least one probe for electrically connection with the electrode pad and a second beam having a number of probes for electrical connection with the electrode pads of which number is more than the number of the electrode pads electrically connected by said first beam.
公开/授权文献
- US20030113944A1 Semiconductor device and a manufacturing method thereof 公开/授权日:2003-06-19