发明授权
- 专利标题： Integrated circuit including field effect transistor and method of manufacture
- 专利标题（中）： 集成电路包括场效应晶体管及其制造方法
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申请号： US10187737申请日： 2002-07-02
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公开(公告)号： US06661024B1公开(公告)日： 2003-12-09
- 发明人: Jie Zhang , Paul Brazis , Daniel Gamota , Krishna Kalyanasundaram , Steven Scheifers , Jerzy Wielgus , Abhijit Roy Chowdhuri
- 申请人： Jie Zhang , Paul Brazis , Daniel Gamota , Krishna Kalyanasundaram , Steven Scheifers , Jerzy Wielgus , Abhijit Roy Chowdhuri
- 主分类号： H01L3524
- IPC分类号： H01L3524
摘要：
An integrated circuit (100, 200, 300, 400) that includes a field effect transistor (102, 202, 302, 402) is fabricated by forming an organic semiconductor channel (112, 216, 308, 418) on one substrate (106, 204), forming device electrodes (114, 116, 110, 208, 210, 212) on one or more other substrates (104, 108, 206), and subsequently laminating the substrates together. In one embodiment, a dielectric patch (214) that functions as a gate dielectric is formed on one of the substrates (204, 206) prior to performing the lamination. Lamination provides a low cost route to device assembly, allows for separate fabrication of different device structures on different substrates, and thins various device layers resulting in improved performance.
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