发明授权
US06664161B2 Method and structure for salicide trench capacitor plate electrode
失效
自杀式沟槽电容器平板电极的方法和结构
- 专利标题： Method and structure for salicide trench capacitor plate electrode
- 专利标题（中）： 自杀式沟槽电容器平板电极的方法和结构
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申请号： US10137268申请日： 2002-05-01
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公开(公告)号： US06664161B2公开(公告)日： 2003-12-16
- 发明人: Michael Patrick Chudzik , Jack Allan Mandelman , Carl John Radens , Rajarao Jammy , Kenneth T. Settlemyer, Jr. , Padraic C. Shafer , Joseph F. Shepard, Jr.
- 申请人： Michael Patrick Chudzik , Jack Allan Mandelman , Carl John Radens , Rajarao Jammy , Kenneth T. Settlemyer, Jr. , Padraic C. Shafer , Joseph F. Shepard, Jr.
- 主分类号： H01L218242
- IPC分类号： H01L218242
摘要：
The present invention is a method and structure for fabricating a trench capacitor within a semiconductor substrate having a buried plate electrode formed of metal silicide. A collar is formed in a trench etched into a substrate; a conformal metal film is deposited thereover, and is annealed to form a silicide that is self-aligned to the collar. Silicide will not be formed on the collar, pads and other areas where the silicon is not directly exposed and hence the metal layer can be removed from these areas by selective etching.