发明授权
- 专利标题： Magnetic random access memory using bipolar junction transistor
- 专利标题（中）： 磁性随机存取存储器采用双极结型晶体管
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申请号： US10139890申请日： 2002-05-06
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公开(公告)号： US06664579B2公开(公告)日： 2003-12-16
- 发明人: Chang Shuk Kim , Hee Bok Kang , Sun Ghil Lee
- 申请人： Chang Shuk Kim , Hee Bok Kang , Sun Ghil Lee
- 优先权： KR2001-28133 20010522
- 主分类号： H01L2976
- IPC分类号： H01L2976
摘要：
A magnetic random access memory (MRAM) having an MTJ cell located between a word line and a gate oxide film, a reference voltage line in a source junction region, and a connection line in a drain junction region. The constitution and fabrication process of the MRAM are simplified to improve productivity and properties of the device.
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