公开(公告)号：US06657270B2

公开(公告)日：2003-12-02

申请号：US10127364

申请日：2002-04-22

申请人： Chang Shuk Kim ,  Hee Bok Kang ,  Sun Ghil Lee

发明人： Chang Shuk Kim ,  Hee Bok Kang ,  Sun Ghil Lee

IPC分类号： H01L2982

CPC分类号： H01L27/226 ,  B82Y10/00 ,  G11C11/16 ,  G11C11/5607

摘要： A magnetic random access memory (MRAM) is disclosed. The MRAM may include a semiconductor substrate serving as a base of a bipolar junction transistor; an emitter and a collector of the bipolar junction transistor provided at an active region of the semiconductor substrate; an MTJ cell positioned at the active region between the emitter and the collector, separately from the emitter and the collector by a predetermined distance; and a word line provided on the MTJ cell. The MRAM may also include a bit line contacting the collector; and a reference voltage line contacting the emitter. As a result, the constitution and fabrication process of the MRAM are simplified to improve productivity and properties of the device.

摘要翻译： 公开了一种磁性随机存取存储器（MRAM）。 MRAM可以包括用作双极结晶体管的基极的半导体衬底; 设置在半导体衬底的有源区的双极结型晶体管的发射极和集电极; 位于发射极和集电极之间的有源区域的MTJ单元与发射极和集电极分开预定距离; 和在MTJ单元上提供的字线。 MRAM还可以包括接收收集器的位线; 以及与发射极接触的参考电压线。 结果，简化了MRAM的结构和制造过程，以提高设备的生产率和性能。

公开(公告)号：US06664579B2

公开(公告)日：2003-12-16

申请号：US10139890

申请日：2002-05-06

申请人： Chang Shuk Kim ,  Hee Bok Kang ,  Sun Ghil Lee

发明人： Chang Shuk Kim ,  Hee Bok Kang ,  Sun Ghil Lee

IPC分类号： H01L2976

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/15 ,  G11C11/16 ,  G11C11/5607

摘要： A magnetic random access memory (MRAM) having an MTJ cell located between a word line and a gate oxide film, a reference voltage line in a source junction region, and a connection line in a drain junction region. The constitution and fabrication process of the MRAM are simplified to improve productivity and properties of the device.

摘要翻译： 具有位于字线和栅极氧化膜之间的MTJ单元的磁性随机存取存储器（MRAM），源极结区域中的参考电压线以及漏极结区域中的连接线。 简化MRAM的结构和制造过程，以提高设备的生产率和性能。