发明授权
- 专利标题: Method of measuring an inner stress state of disk substrate
- 专利标题(中): 测量盘基片内应力状态的方法
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申请号: US09781557申请日: 2001-02-13
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公开(公告)号: US06665059B2公开(公告)日: 2003-12-16
- 发明人: Toshiyuki Kanno , Eiji Ishibashi , Toru Yoshizawa , Yukitoshi Otani
- 申请人: Toshiyuki Kanno , Eiji Ishibashi , Toru Yoshizawa , Yukitoshi Otani
- 优先权: JP2000-035820 20000214
- 主分类号: G01B1116
- IPC分类号: G01B1116
摘要:
A measuring method capable of automatically analyzing quantitatively the inner state of a disk is provided. Linearly polarized light from a light source enters a retarder to produce a desired elliptically polarized state. The elliptically polarized light is then passed through a half-wave plate to rotate the direction of a principal axis of the ellipse. The light is expanded into two dimensions by lens systems and to obtain planar information, and is further transmitted through a disk substrate so that the birefringence of a specimen, which depends on an inner stress state and a polymer orientation state, changes the phase of the light. The light wave with its phase changed is passed through a polarizer arranged perpendicular to the principal axis of the retarder. The CCD detects the light wave as a light intensity.
公开/授权文献
- US20010028451A1 Method of measuring inner stress state of disk substrate 公开/授权日:2001-10-11