发明授权
- 专利标题： Self-aligned buried strap process using doped HDP oxide
- 专利标题（中）： 使用掺杂HDP氧化物的自对准掩埋工艺
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申请号： US10249228申请日： 2003-03-24
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公开(公告)号： US06667504B1公开(公告)日： 2003-12-23
- 发明人: Jochen Beintner , Wolfgang Bergner , Richard A. Conti , Andreas Knorr , Rolf Weis
- 申请人： Jochen Beintner , Wolfgang Bergner , Richard A. Conti , Andreas Knorr , Rolf Weis
- 主分类号： H01L27108
- IPC分类号： H01L27108
摘要：
The invention provides a trench storage structure that includes a substrate having a trench, a capacitor conductor in the lower part of the trench, a conductive node strap in the trench adjacent the capacitor conductor, a trench top oxide above the capacitor conductor, and a conductive buried strap in the substrate adjacent the trench top oxide. The trench top oxide includes a doped trench top oxide layer above the conductive strap, and an undoped trench top oxide layer above the doped trench top oxide layer.