发明授权
US06667511B1 NAND type core cell structure for a high density flash memory device having a unique select gate transistor configuration
失效
具有独特的选择栅极晶体管配置的高密度闪存器件的NAND型核心单元结构
- 专利标题： NAND type core cell structure for a high density flash memory device having a unique select gate transistor configuration
- 专利标题（中）： 具有独特的选择栅极晶体管配置的高密度闪存器件的NAND型核心单元结构
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申请号： US08993368申请日： 1997-12-18
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公开(公告)号： US06667511B1公开(公告)日： 2003-12-23
- 发明人: Hao Fang
- 申请人： Hao Fang
- 主分类号： H01L29788
- IPC分类号： H01L29788
摘要：
A method of forming a NAND-type flash memory device including forming a stacked gate flash memory structure (346) containing an interpoly dielectric layer (322) for one or more flash memory cells in a core region (305). The method also includes forming a select gate transistor structure (348) having a first gate oxide (322) formed of the interpoly dielectric material and a gate conductor (338) overlying the first gate oxide (322) in the core region (305). A NAND-type flash memory device includes a core region (305) comprising a stacked gate flash memory cell structure (346) and a select gate transistor (348) and a periphery region (314, 315) comprising a low voltage transistor (342) and a high voltage transistor (350). The stacked gate flash memory cell structure (346) includes a tunnel oxide layer (308), a poly1 layer (312) overlying the tunnel oxide layer (308), an interpoly dielectric layer (322) formed of an insulating material overlying the poly1 layer (312) and a poly2 layer (338) overlying the interpoly dielectric layer (322). In addition, the select gate transistor structure (348) includes a gate insulator (322) formed of the insulating material and a poly2 layer (338) overlying the gate insulator (322).
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