- 专利标题: Pyrolytic boron nitride crucible and method
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申请号: US09865395申请日: 2001-05-24
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公开(公告)号: US06670025B2公开(公告)日: 2003-12-30
- 发明人: Ajit Y. Sane , Jeffrey Lennartz , Arthur Moore , Thomas Devan
- 申请人: Ajit Y. Sane , Jeffrey Lennartz , Arthur Moore , Thomas Devan
- 主分类号: B32B900
- IPC分类号: B32B900
摘要:
A method of forming a pyrolytic boron nitride (PBN) article and an article having layers of PBN separated by layers of PBN having a dopant of sufficient concentration to induce peeling, the steps of introducing vapors of ammonia and a gaseous boron halide in a suitable ratio into a heated furnace reactor to cause boron nitride to be deposited in layers on a substrate, with at least one gaseous dopant injected into furnace at controlled periodic interval(s) such that at least two selected layers of boron nitride are doped with said gaseous dopant(s) at a minimum average concentration of 2 atomic wt % at a depth ranging from 1000 to 2000 angstroms in each selected layer, and with the selected layers spaced apart about 0.1 micron to 100 microns apart.
公开/授权文献
- US20020182394A1 Pyrolytic boron nitride crucible and method 公开/授权日:2002-12-05
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