发明授权
US06670990B1 Image sensing device using MOS-type image sensing element whose threshold voltage of charge transfer switch and reset switch is different from that of signal output transistor
有权
使用MOS电荷感应元件的图像感测装置,其电荷转移开关和复位开关的阈值电压与信号输出晶体管的阈值电压不同
- 专利标题: Image sensing device using MOS-type image sensing element whose threshold voltage of charge transfer switch and reset switch is different from that of signal output transistor
- 专利标题(中): 使用MOS电荷感应元件的图像感测装置,其电荷转移开关和复位开关的阈值电压与信号输出晶体管的阈值电压不同
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申请号: US09161402申请日: 1998-09-28
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公开(公告)号: US06670990B1公开(公告)日: 2003-12-30
- 发明人: Tetsunobu Kochi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Katsuhito Sakurai , Hiroki Hiyama
- 申请人: Tetsunobu Kochi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Katsuhito Sakurai , Hiroki Hiyama
- 优先权: JP9-263545 19970929; JP9-361089 19971226
- 主分类号: H04N314
- IPC分类号: H04N314
摘要:
In a photoelectric conversion device having a plurality of pixel cells each of which includes a photoelectric conversion element, a field effect transistor having the gate area for storing signal charge generated by the photoelectric conversion element and the source-drain path for outputting a signal corresponding to the signal charge stored in the gate, a first power supply line for supplying electric power to the field effect transistor, and a first switch connected between the field effect transistor and the first power supply line, when a reset voltage for resetting the gate of the field effect transistor is Vsig0, a threshold voltage of the field effect transistor is Vth, current flowing through the field effect transistor is Ia, a voltage applied via the first power supply line is Vc1, and a series resistance of the first switch is Ron, each pixel cell is configured to satisfy a condition determined by Vc1−Ron×Ia>Vsig0−Vth.
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