发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
-
申请号： US09843726申请日： 2001-04-30
-
公开(公告)号： US06673725B2公开(公告)日： 2004-01-06
- 发明人: Yoshimi Shioya , Kouichi Ohira , Kazuo Maeda
- 申请人： Yoshimi Shioya , Kouichi Ohira , Kazuo Maeda
- 优先权： JP2000-153486 20000524
- 主分类号： H01L2131
- IPC分类号： H01L2131
摘要：
The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant by coating a copper wiring. The low dielectric constant insulating film is formed by reaction of a plasma of a film-forming gas containing an oxygen-containing gas of N2O, H2O, or CO2, ammonia (NH3), and at least one of an alkyl compound having a siloxane bond and methylsilane (SiHn(CH3)4−n: n=0, 1, 2, 3).