发明授权
- 专利标题： Structure and method for planar lateral oxidation in active
- 专利标题（中）： 主动平面侧面氧化的结构和方法
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申请号： US09472754申请日： 1999-12-27
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公开(公告)号： US06674090B1公开(公告)日： 2004-01-06
- 发明人: Christopher L. Chua , Philip D. Floyd , Thomas L. Paoli , Decai Sun
- 申请人： Christopher L. Chua , Philip D. Floyd , Thomas L. Paoli , Decai Sun
- 主分类号： H01L2906
- IPC分类号： H01L2906
摘要：
An active semiconductor device is made using planar lateral oxidation to define a core region that is surrounded by regions of buried oxidized semiconductor material in. The buried oxidized semiconductor material provides optical waveguiding, and or a defined electrical path.
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