Invention Grant
US06677254B2 Processes for making a barrier between a dielectric and a conductor and products produced therefrom
有权
用于在电介质和导体之间形成屏障的工艺以及由其制造的产品
- Patent Title: Processes for making a barrier between a dielectric and a conductor and products produced therefrom
- Patent Title (中): 用于在电介质和导体之间形成屏障的工艺以及由其制造的产品
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Application No.: US09911947Application Date: 2001-07-23
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Publication No.: US06677254B2Publication Date: 2004-01-13
- Inventor: Pravin Narwankar , Mouloud Bakli , Ravi Rajagopalan , Randall S. Urdahl , Asher Sinensky , Shankarram Athreya
- Applicant: Pravin Narwankar , Mouloud Bakli , Ravi Rajagopalan , Randall S. Urdahl , Asher Sinensky , Shankarram Athreya
- Main IPC: H01L2131
- IPC: H01L2131

Abstract:
The formation of a barrier layer over a high k dielectric layer and deposition of a conducting layer over the barrier layer prevents intermigration between the species of the high k dielectric layer and the conducting layer and prevents oxygen scavenging of the high k dielectric layer. One example of a capacitor stack device provided includes a high k dielectric layer of Ta2O5, a barrier layer of TaON or TiON formed at least in part by a remote plasma process, and a top electrode of TiN. The processes may be conducted at about 300 to 700° C. and are thus useful for low thermal budget applications. Also provided are MIM capacitor constructions and methods in which an insulator layer is formed by remote plasma oxidation of a bottom electrode.
Public/Granted literature
- US20030025146A1 Processes for making a barrier between a dielectric and a conductor and products produced therefrom Public/Granted day:2003-02-06
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