发明授权
US06677622B2 Semiconductor device having insulated gate bipolar transistor with dielectric isolation structure
失效
具有绝缘栅双极晶体管的半导体器件，具有绝缘隔离结构
- 专利标题： Semiconductor device having insulated gate bipolar transistor with dielectric isolation structure
- 专利标题（中）： 具有绝缘栅双极晶体管的半导体器件，具有绝缘隔离结构
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申请号： US10090823申请日： 2002-03-06
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公开(公告)号： US06677622B2公开(公告)日： 2004-01-13
- 发明人: Fumito Suzuki , Hitoshi Takahashi , Haruki Arai , Yoshihiro Yamaguchi
- 申请人： Fumito Suzuki , Hitoshi Takahashi , Haruki Arai , Yoshihiro Yamaguchi
- 优先权： JP2001-063727 20010307
- 主分类号： H01L2974
- IPC分类号： H01L2974
摘要：
A semiconductor substrate is of first-conductivity-type and has a principal surface. A first semiconductor region and a second semiconductor region are of second-conductivity-type and formed apart from each other in the principal surface of the semiconductor substrate. A third semiconductor region is of second-conductivity-type and formed on the first semiconductor region. The third semiconductor region has an impurity concentration higher than that of the first semiconductor region. A fourth semiconductor region is of first-conductivity-type and formed on the third semiconductor region. A first main electrode is formed on the fourth semiconductor region. A second main electrode is formed on the second semiconductor region. A gate electrode is formed, at least on the first semiconductor region and on the principal surface of the semiconductor substrate between the fourth semiconductor region and the second semiconductor region, with a gate insulating film therebetween.