发明授权
- 专利标题: Cleaning method and cleaner
- 专利标题(中): 清洁方法和清洁剂
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申请号: US09892742申请日: 2001-06-28
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公开(公告)号: US06679950B2公开(公告)日: 2004-01-20
- 发明人: Hiroshi Tomita , Motoyuki Sato , Soichi Nadahara , Mitsuhiko Shirakashi , Kenya Ito
- 申请人: Hiroshi Tomita , Motoyuki Sato , Soichi Nadahara , Mitsuhiko Shirakashi , Kenya Ito
- 优先权: JP2000-197233 20000629
- 主分类号: B08B300
- IPC分类号: B08B300
摘要:
A substrate cleaning method of the present invention enables effective cleaning of a wafer having a recess therein without causing any increase in cleaning costs. Ozone gas and ammonia water are supplied to an area right above a wafer 7 having a recess therein, and a gas-dissolving liquid is produced by dissolving the ozone gas in the ammonia water. The gas-dissolving liquid is used to carry out contact and non-contact types of physical cleaning on the wafer.
公开/授权文献
- US20020005214A1 Cleaning method and cleaner 公开/授权日:2002-01-17
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