发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US09944584申请日: 2001-09-04
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公开(公告)号: US06680835B2公开(公告)日: 2004-01-20
- 发明人: Mitsuharu Tabata
- 申请人: Mitsuharu Tabata
- 优先权: JP2001-104546 20010403
- 主分类号: H02H318
- IPC分类号: H02H318
摘要:
It is an object to provide a semiconductor device comprising a short circuit protecting system capable of enhancing the detection precision of a collector current, thereby carrying out a reliable short circuit protection. An IGBT (1) having a collector (C) connected to a terminal (T1) and an emitter (E) connected to a terminal (T2) is provided, and has a sense emitter (SE) connected to a terminal (T2) through a variable resistor (VR1) to be a current and voltage converting section. A sense potential is output from an end on the sense emitter (SE) side of the variable resistor (VR1) and is given to a terminal (T11) of a current ratio detecting section (15). A gate of the IGBT (1) is connected to a terminal (T3) and an output of the current ratio detecting section (15) is connected to a terminal (T4).
公开/授权文献
- US20020141126A1 Semiconductor device 公开/授权日:2002-10-03
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