发明授权
US06680835B2 Semiconductor device 有权
半导体器件

  • 专利标题: Semiconductor device
  • 专利标题(中): 半导体器件
  • 申请号: US09944584
    申请日: 2001-09-04
  • 公开(公告)号: US06680835B2
    公开(公告)日: 2004-01-20
  • 发明人: Mitsuharu Tabata
  • 申请人: Mitsuharu Tabata
  • 优先权: JP2001-104546 20010403
  • 主分类号: H02H318
  • IPC分类号: H02H318
Semiconductor device
摘要:
It is an object to provide a semiconductor device comprising a short circuit protecting system capable of enhancing the detection precision of a collector current, thereby carrying out a reliable short circuit protection. An IGBT (1) having a collector (C) connected to a terminal (T1) and an emitter (E) connected to a terminal (T2) is provided, and has a sense emitter (SE) connected to a terminal (T2) through a variable resistor (VR1) to be a current and voltage converting section. A sense potential is output from an end on the sense emitter (SE) side of the variable resistor (VR1) and is given to a terminal (T11) of a current ratio detecting section (15). A gate of the IGBT (1) is connected to a terminal (T3) and an output of the current ratio detecting section (15) is connected to a terminal (T4).
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