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10 条记录 (耗时 0.015 秒)

    Power conversion circuit
    1.
    发明授权
    Power conversion circuit 有权
    电源转换电路

    公开(公告)号：US08716986B2

    公开(公告)日：2014-05-06

    申请号：US13010365

    申请日：2011-01-20

    申请人： Mitsuharu Tabata

    发明人： Mitsuharu Tabata

    IPC分类号： G05F1/10

    CPC分类号： H02M7/538 ,  H02M2001/348

    摘要： A power conversion circuit which receives a high potential, a low potential, and a neutral potential intermediate between the high and low potentials includes an AC switch connected so as to receive the neutral potential and a switching device receiving the high potential. The AC switch includes a diode and an inductance is connected to the diode and the switching device.

    摘要翻译： 在高电位和低电位之间接收高电位，低电位和中性电位的电力转换电路包括连接以接收中性电位的AC开关和接收高电位的开关装置。 交流开关包括二极管，电感连接到二极管和开关装置。

    POWER CONVERSION CIRCUIT
    2.
    发明申请
    POWER CONVERSION CIRCUIT 有权
    电源转换电路

    公开(公告)号：US20110273159A1

    公开(公告)日：2011-11-10

    申请号：US13010365

    申请日：2011-01-20

    申请人： Mitsuharu TABATA

    发明人： Mitsuharu TABATA

    IPC分类号： G05F3/04

    CPC分类号： H02M7/538 ,  H02M2001/348

    摘要： A power conversion circuit includes a high side switching device connected at its collector to the high potential side of a power supply, a low side switching device connected at its emitter to the low potential side of the power supply, a first junction to which the emitter of the high side switching device and the collector of the low side switching device are connected, a first diode connected at its cathode to the collector of the high side switching device, a second diode connected at its anode to the emitter of the low side switching device, a second junction to which the anode of the first diode and the cathode of the second diode are connected, an inductance connected between the first and second junctions, and a snubber circuit connected to the first junction and adapted to absorb stored energy in the inductance when a freewheeling current flows.

    摘要翻译： 电源转换电路包括在其集电极处连接到电源的高电位侧的高侧开关装置，在其发射极处连接到电源的低电位侧的低侧开关装置，发射极 与低侧开关元件的集电极连接的第一二极管，其阴极与高侧开关元件的集电极连接，第二二极管在其阳极连接到低压侧开关的发射极 连接第一二极管的阳极和第二二极管的阴极的第二结，连接在第一和第二结之间的电感，以及连接到第一结的缓冲电路，并且适于吸收第二二极管中的存储能量 续流电流时的电感。

    Insulated gate semiconductor device
    4.
    发明授权
    Insulated gate semiconductor device 失效
    绝缘栅半导体器件

    公开(公告)号：US5432471A

    公开(公告)日：1995-07-11

    申请号：US113896

    申请日：1993-08-31

    申请人： Gourab Majumdar ,  Shinji Hatae ,  Mitsuharu Tabata ,  Takashi Marumo

    发明人： Gourab Majumdar ,  Shinji Hatae ,  Mitsuharu Tabata ,  Takashi Marumo

    IPC分类号： H03K17/12 ,  H03K17/08 ,  H03K17/082 ,  H03K17/14 ,  H03K17/16 ,  H03K17/56

    CPC分类号： H03K17/168 ,  H03K17/0822 ,  H03K17/0828 ,  H03K17/166

    摘要： In order to prevent a malfunction caused by an electrical noise and limit an excessive main current at a high speed while cutting off the same to a value close to zero, the main current is regulated by an IGBT (1) which is connected with a load. A part of this main current is shunted to another IGBT (2). The as-shunted current flows through a resistor (3), to be converted to a voltage across the resistor (3). When the main current is excessively increased by shorting of the load or the like, this voltage exceeds a prescribed value so that a transistor (5) and a thyristor (7) enter conducting states. Consequently, a voltage across a gate (G) and an emitter (E) of the IGBT (1) is so reduced as to cut off the main current. The transistor (5) prevents the main current from excessive increase since the same has a high speed of response, while the thyristor (7) cuts off the main current to zero since the same has lower resistance in conduction.

    摘要翻译： 为了防止由电噪声引起的故障，并且在将其截止到接近零的值的同时将高电流限制在过大的主电流，主电流由与负载连接的IGBT（1） 。 该主电流的一部分被分流到另一个IGBT（2）。 分流电流流过电阻器（3），以转换成电阻器（3）两端的电压。 当通过负载等的短路使主电流过度增加时，该电压超过规定值，使得晶体管（5）和晶闸管（7）进入导通状态。 因此，IGBT（1）的栅极（G）和发射极（E）之间的电压被减小以截断主电流。 由于晶体管（5）具有较高的响应速度，所以晶体管（5）防止主电流过度增加，而晶闸管（7）将主电流切断为零，因为该电流具有较低的导通电阻。

    Semiconductor device
    10.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US06680835B2

    公开(公告)日：2004-01-20

    申请号：US09944584

    申请日：2001-09-04

    申请人： Mitsuharu Tabata

    发明人： Mitsuharu Tabata

    IPC分类号： H02H318

    CPC分类号： H03K17/0828 ,  H03K2217/0027

    摘要： It is an object to provide a semiconductor device comprising a short circuit protecting system capable of enhancing the detection precision of a collector current, thereby carrying out a reliable short circuit protection. An IGBT (1) having a collector (C) connected to a terminal (T1) and an emitter (E) connected to a terminal (T2) is provided, and has a sense emitter (SE) connected to a terminal (T2) through a variable resistor (VR1) to be a current and voltage converting section. A sense potential is output from an end on the sense emitter (SE) side of the variable resistor (VR1) and is given to a terminal (T11) of a current ratio detecting section (15). A gate of the IGBT (1) is connected to a terminal (T3) and an output of the current ratio detecting section (15) is connected to a terminal (T4).

    摘要翻译： 本发明的目的是提供一种包括能够提高集电极电流的检测精度的短路保护系统的半导体装置，从而进行可靠的短路保护。 提供具有连接到端子（T1）的集电极（C）和连接到端子（T2）的发射极（E））的IGBT（1），并且具有通过连接到端子（T2）的感测发射极（SE） 作为电流和电压转换部分的可变电阻器（VR1）。 感测电位从可变电阻器（VR1）的感测发射极（SE）侧的端部输出，并被赋予电流比检测部件（15）的端子（T11）。 IGBT（1）的栅极连接到端子（T3），电流比检测部（15）的输出端连接到端子（T4）。