发明授权
US06682990B1 Separation method of semiconductor layer and production method of solar cell
失效
半导体层的分离方法和太阳能电池的制造方法
- 专利标题： Separation method of semiconductor layer and production method of solar cell
- 专利标题（中）： 半导体层的分离方法和太阳能电池的制造方法
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申请号： US09656014申请日： 2000-09-07
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公开(公告)号： US06682990B1公开(公告)日： 2004-01-27
- 发明人: Masaaki Iwane , Katsumi Nakagawa , Makoto Iwakami , Shoji Nishida , Noritaka Ukiyo , Yukiko Iwasaki , Masaki Mizutani
- 申请人： Masaaki Iwane , Katsumi Nakagawa , Makoto Iwakami , Shoji Nishida , Noritaka Ukiyo , Yukiko Iwasaki , Masaki Mizutani
- 优先权： JP11-255645 19990909
- 主分类号： H01L2130
- IPC分类号： H01L2130
摘要：
The separation method of a semiconductor layer according to the present invention comprises separating a semiconductor layer and a semiconductor substrate at a separation layer formed therebetween, wherein a face of the semiconductor layer at the side opposite to the separation layer and/or a face of the semiconductor substrate at the side opposite to the separation layer are held by utilizing an ice layer, whereby it is unnecessary to use an adhesive as holding means and at the same time it is possible to easily and uniformly separate them.