发明授权
- 专利标题: Defect inspection method and apparatus for silicon wafer
- 专利标题(中): 硅片缺陷检查方法及装置
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申请号: US10084059申请日: 2002-02-28
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公开(公告)号: US06683683B2公开(公告)日: 2004-01-27
- 发明人: Koji Tomita , Muneo Maeshima , Shigeru Matsui , Yoshitaka Kodama , Hitoshi Komuro , Kazuo Takeda
- 申请人: Koji Tomita , Muneo Maeshima , Shigeru Matsui , Yoshitaka Kodama , Hitoshi Komuro , Kazuo Takeda
- 主分类号: G01N2188
- IPC分类号: G01N2188
摘要:
A defect inspection apparatus for detecting defects existing on a surface of a semiconductor sample and/or inside the sample based on light information from the sample obtained by irradiating a light beam onto the sample is provided, which comprises a detecting means for detecting positions in the depth direction where the defects exist and distribution of the defects based on the light information; a setting means for setting a position in the depth direction where defects exist; and a means for displaying the distribution of the defects obtained by the detecting means, the displaying means displaying the distribution of the defects corresponding to the position in the depth direction set by the setting means.
公开/授权文献
- US20020080344A1 Defect inspection method and apparatus for silicon wafer 公开/授权日:2002-06-27