True defect monitoring through repeating defect deletion

发明授权

US06684164B1 True defect monitoring through repeating defect deletion 有权

标题翻译：通过重复缺陷删除进行真实的缺陷监测

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专利标题： True defect monitoring through repeating defect deletion
专利标题（中）： 通过重复缺陷删除进行真实的缺陷监测
申请号： US10064908

申请日： 2002-08-28
公开(公告)号： US06684164B1

公开(公告)日： 2004-01-27
发明人: Kung-Yi Chen , Wei-Ming Chen , Shu-Ling Ku , Mao-I Ting , Lien-Che Ho
申请人： Kung-Yi Chen , Wei-Ming Chen , Shu-Ling Ku , Mao-I Ting , Lien-Che Ho
主分类号： G06K964
IPC分类号： G06K964

True defect monitoring through repeating defect deletion

摘要：

A method of deleting repeating defects having no effect on product yield of a wafer so that true defects on the wafer are more readily found. A wafer having a plurality of dies thereon is provided. The wafer is scanned to find any repeating defects. If the repeating defects have no effect on the product yield, the area around the repeating defects is marked out as “don't care” region. Another wafer scanning operation to find the true defects is subsequently conducted by scanning the region outside the “don't care” region.

摘要（中）：

删除对晶片的产品产率没有影响的重复缺陷的方法，使得更容易发现晶片上的真实缺陷。提供其上具有多个管芯的晶片。扫描晶片以发现任何重复的缺陷。如果重复缺陷对产品产量没有影响，则重复缺陷周围的区域被标记为“不关心”区域。随后通过扫描“不关心”区域外的区域进行另一个找到真实缺陷的晶片扫描操作。

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