公开(公告)号：US06726774B2

公开(公告)日：2004-04-27

申请号：US10196290

申请日：2002-07-17

申请人： Jia-Hau Tzeng ,  Yuh-Tong Tsay ,  Chung-Te Tsai ,  Cheng-Yi Lin ,  Mao-I Ting

发明人： Jia-Hau Tzeng ,  Yuh-Tong Tsay ,  Chung-Te Tsai ,  Cheng-Yi Lin ,  Mao-I Ting

IPC分类号： B05C1100

CPC分类号： H01L21/67288 ,  H01L21/67253

摘要： A bubble detection system to detect bubbles in photoresist. The system includes photoresist at least one tank, a buffer tank, a pump, and a bubble sensor. The photoresist tank provides the photoresist. The buffer tank stores the photoresist from the photoresist tank. The pump pumps the photoresist from the buffer tank to an end terminal. The bubble sensor is set between the buffer tank and the pump to detect bubbles in the photoresist, and outputs an alarm signal when bubbles are detected. The nozzle is set at the end terminal to output the photoresist.

摘要翻译： 用于检测光致抗蚀剂中气泡的气泡检测系统。 该系统包括至少一个储罐，缓冲罐，泵和气泡传感器的光致抗蚀剂。 光致抗蚀剂槽提供光致抗蚀剂。 缓冲罐储存来自光致抗蚀剂槽的光致抗蚀剂。 泵将光致抗蚀剂从缓冲罐泵送到终端。 气泡传感器设置在缓冲罐和泵之间，以检测光致抗蚀剂中的气泡，并在检测到气泡时输出报警信号。 喷嘴设置在末端以输出光致抗蚀剂。

公开(公告)号：US06799152B1

公开(公告)日：2004-09-28

申请号：US10206268

申请日：2002-07-26

申请人： Chih-Ping Chen ,  Shao-Chung Hsu ,  De-Chuan Liu ,  Jung-Kuei Lu ,  Cheng-Yi Lin ,  Ta-Hung Yang ,  Hsin-Cheng Liu ,  Mao-I Ting ,  Yih-Cheng Shih

发明人： Chih-Ping Chen ,  Shao-Chung Hsu ,  De-Chuan Liu ,  Jung-Kuei Lu ,  Cheng-Yi Lin ,  Ta-Hung Yang ,  Hsin-Cheng Liu ,  Mao-I Ting ,  Yih-Cheng Shih

IPC分类号： G06F1750

CPC分类号： G06F17/50 ,  G06F2217/10 ,  G07C3/146

摘要： The current invention provides a method for analyzing process variations that occur during integrated circuit fabrication. Critical dimension data is collected for each layer of the integrated circuit fabrication process for a period of time and a shift indicator that indicates variation in the critical dimension data for each layer of the integrated circuit fabrication process is calculated. A machine drift significance indicator is also calculated for each machine used in each layer of the integrated circuit fabrication process, and a maximum shift of mean value for each layer of the integrated circuit fabrication process is defined. The shift indicator, the maximum shift of mean value and the machine drift significance indicator are used to determine at least one likely cause of variation in critical dimension for each layer of the integrated circuit fabrication process.

摘要翻译： 本发明提供了一种用于分析在集成电路制造期间发生的工艺变化的方法。 针对集成电路制造过程的每个层收集关键尺寸数据一段时间，并且计算指示集成电路制造过程的每层的临界尺寸数据的变化的移位指示器。 还针对在集成电路制造工艺的每个层中使用的每个机器计算机器漂移显着性指标，并且定义了集成电路制造工艺的每一层的平均值的最大偏移。 移位指示器，平均值的最大偏移和机器漂移显着性指示器用于确定集成电路制造过程的每个层的关键尺寸的至少一个可能的变化原因。

公开(公告)号：US06684164B1

公开(公告)日：2004-01-27

申请号：US10064908

申请日：2002-08-28

申请人： Kung-Yi Chen ,  Wei-Ming Chen ,  Shu-Ling Ku ,  Mao-I Ting ,  Lien-Che Ho

发明人： Kung-Yi Chen ,  Wei-Ming Chen ,  Shu-Ling Ku ,  Mao-I Ting ,  Lien-Che Ho

IPC分类号： G06K964

CPC分类号： G03F7/7065 ,  G06T7/0004 ,  G06T2207/30148

摘要： A method of deleting repeating defects having no effect on product yield of a wafer so that true defects on the wafer are more readily found. A wafer having a plurality of dies thereon is provided. The wafer is scanned to find any repeating defects. If the repeating defects have no effect on the product yield, the area around the repeating defects is marked out as “don't care” region. Another wafer scanning operation to find the true defects is subsequently conducted by scanning the region outside the “don't care” region.

摘要翻译： 删除对晶片的产品产率没有影响的重复缺陷的方法，使得更容易发现晶片上的真实缺陷。 提供其上具有多个管芯的晶片。 扫描晶片以发现任何重复的缺陷。 如果重复缺陷对产品产量没有影响，则重复缺陷周围的区域被标记为“不关心”区域。 随后通过扫描“不关心”区域外的区域进行另一个找到真实缺陷的晶片扫描操作。