发明授权
- 专利标题： Method of forming self-aligned bipolar transistor
- 专利标题（中）： 形成自对准双极晶体管的方法
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申请号： US10300105申请日： 2002-11-20
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公开(公告)号： US06686250B1公开(公告)日： 2004-02-03
- 发明人: Alexander Kalnitsky , Michael Rowlandson , Fanling H. Yang , Sang Park , Robert F. Scheer
- 申请人： Alexander Kalnitsky , Michael Rowlandson , Fanling H. Yang , Sang Park , Robert F. Scheer
- 主分类号： H01L21331
- IPC分类号： H01L21331
摘要：
A self-aligned bipolar transistor and a method of formation thereof are provided. The bipolar transistor has an emitter region characterized by a y-shaped structure formed from bilayer polysilicon. The bilayer polysilicon includes a first polysilicon emitter structure and a second polysilicon emitter structure. The method of forming the bipolar transistor includes forming an emitter stack on a substrate. The emitter stack comprises the first polysilicon emitter structure and a plug structure. The emitter stack defines the substrate into a masked portion and exposed adjacent portions. The exposed adjacent portions are selectively doped with a dopant to define an extrinsic base region, wherein the dopant is blocked from entering the masked portion. After selectively doping the extrinsic base region, the plug structure is removed from the emitter stack and the second polysilicon emitter structure is formed on the first polysilicon emitter structure to define the emitter region of the bipolar transistor.