发明授权
- 专利标题: Ion production device for ion beam irradiation apparatus
- 专利标题(中): 离子束照射装置的离子生产装置
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申请号: US09996926申请日: 2001-11-30
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公开(公告)号: US06686599B2公开(公告)日: 2004-02-03
- 发明人: Nariaki Hamamoto , Shigeki Sakai
- 申请人: Nariaki Hamamoto , Shigeki Sakai
- 优先权: JPP.2000-366916 20001201
- 主分类号: H01J3730
- IPC分类号: H01J3730
摘要:
An ion beam irradiation apparatus is provided with a plasma production device 30 which produces a plasma 12 through the radio frequency discharge and supplies the produced plasma in the vicinity of the substrate 4. The plasma production device 30 includes a plasma producing chamber 32 being elongated along an axis 33 extending in scanning directions X in which the ion beam is moved; a plasma emission hole 34 being provided in a side thereof and elongated along the axis 33 of the plasma producing chamber; and a magnet 36 provided outside the plasma producing chamber 32 for producing a magnetic field having a direction along the axis 33. The magnetic field developed by the magnet 36 contains a magnetic field which has a direction along the axis and bends to the substrate ions contained in the plasma 12 emitted from a plasma emission hole 34.
公开/授权文献
- US20020088950A1 Ion production device for ion beam irradiation apparatus 公开/授权日:2002-07-11
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