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62 条记录 (耗时 0.055 秒)

    Ion production device for ion beam irradiation apparatus
    1.
    发明授权
    Ion production device for ion beam irradiation apparatus 有权
    离子束照射装置的离子生产装置

    公开(公告)号：US06686599B2

    公开(公告)日：2004-02-03

    申请号：US09996926

    申请日：2001-11-30

    申请人： Nariaki Hamamoto ,  Shigeki Sakai

    发明人： Nariaki Hamamoto ,  Shigeki Sakai

    IPC分类号： H01J3730

    CPC分类号： H01J37/3171 ,  H01J2237/0041

    摘要： An ion beam irradiation apparatus is provided with a plasma production device 30 which produces a plasma 12 through the radio frequency discharge and supplies the produced plasma in the vicinity of the substrate 4. The plasma production device 30 includes a plasma producing chamber 32 being elongated along an axis 33 extending in scanning directions X in which the ion beam is moved; a plasma emission hole 34 being provided in a side thereof and elongated along the axis 33 of the plasma producing chamber; and a magnet 36 provided outside the plasma producing chamber 32 for producing a magnetic field having a direction along the axis 33. The magnetic field developed by the magnet 36 contains a magnetic field which has a direction along the axis and bends to the substrate ions contained in the plasma 12 emitted from a plasma emission hole 34.

    摘要翻译： 离子束照射装置设置有等离子体生成装置30，其通过射频放电产生等离子体12，并将所产生的等离子体供给到基板4附近。等离子体生成装置30包括沿着 在离子束移动的扫描方向X上延伸的轴33; 等离子体发射孔34设置在其侧面并沿着等离子体产生室的轴线33延伸; 以及设置在等离子体产生室32外部的磁体36，用于产生具有沿着轴线33的方向的磁场。由磁体36产生的磁场包含具有沿着轴线的方向并弯曲到包含的基板离子的磁场 在从等离子体发射孔34发射的等离子体12中。

    Beam delivery system
    3.
    发明授权
    Beam delivery system 有权
    光束传送系统

    公开(公告)号：US06617586B2

    公开(公告)日：2003-09-09

    申请号：US10050146

    申请日：2002-01-18

    申请人： David Woodburn ,  Walter Crewson

    发明人： David Woodburn ,  Walter Crewson

    IPC分类号： H01J3730

    CPC分类号： G21K5/04 ,  H01J2237/152

    摘要： A beam delivery system uses a set of electronically controlled magnets with a common magnetic yoke to steer the beam directly onto the products being irradiated with a very short distance between the magnets and the products.

    摘要翻译： 光束传送系统使用一组具有公共磁轭的电子控制磁体，以将光束直接引导到被磁体和产品之间非常短距离照射的产品上。

    Investigation device and method
    4.
    发明授权
    Investigation device and method 失效
    调查装置及方法

    公开(公告)号：US06566653B1

    公开(公告)日：2003-05-20

    申请号：US09683592

    申请日：2002-01-23

    申请人： Christoph Gerber ,  Michel Despont ,  Peter Vettiger ,  Ernst Meyer ,  Roland Bennewitz

    发明人： Christoph Gerber ,  Michel Despont ,  Peter Vettiger ,  Ernst Meyer ,  Roland Bennewitz

    IPC分类号： H01J3730

    CPC分类号： H01J49/04 ,  H01J49/40 ,  Y10S977/852

    摘要： An investigation device includes a time of flight mass spectrometer with an entrance opening, and an electrically conductive tip on a cantilever which is movable from a first position near a sample on a sample holder to a second position near the entrance opening. A sample particle is obtained with the tip being in the first position from the sample. The tip, with the particle, is moved into the second position where the particle can be accelerated towards the entrance opening. The particle is analyzable by the time of flight mass spectrometer.

    摘要翻译： 调查装置包括具有入口开口的飞行时间质谱仪和悬臂上的导电尖端，其可从样品架上的样品附近的第一位置移动到靠近入口的第二位置。 获得样品颗粒，其中尖端处于样品的第一位置。 具有颗粒的尖端移动到第二位置，在该位置，颗粒可以朝向入口开口加速。 颗粒可以通过飞行时间质谱仪进行分析。

    Through-the-substrate investigation of flip-chip IC's
    6.
    发明授权
    Through-the-substrate investigation of flip-chip IC's 有权
    倒装芯片的底层调查

    公开(公告)号：US06518571B2

    公开(公告)日：2003-02-11

    申请号：US09781488

    申请日：2001-02-10

    申请人： Christopher Graham Talbot ,  James Henry Brown

    发明人： Christopher Graham Talbot ,  James Henry Brown

    IPC分类号： H01J3730

    CPC分类号： H01L22/12

    摘要： Methods are provided for exposing a selected feature of an IC device, such as a selected conductor, from the back side of the substrate without disturbing adjacent features of the device, such as active regions. One such method comprises: (a) determining a region of the IC device in which the selected feature is located; (b) acquiring from the back side of the substrate an IR optical microscope image of the region; (c) aligning the IR optical microscope image with a coordinate system of a milling system; and (d) using structures visible in the IR optical microscope image as a guide, operating the milling system to expose the selected feature from the back side of the IC device without disturbing adjacent features.

    摘要翻译： 提供了用于从基板的背面暴露诸如所选择的导体的IC器件的选定特征的方法，而不干扰诸如有源区域的器件的相邻特征。 一种这样的方法包括：（a）确定所选择的特征位于其中的IC设备的区域; （b）从所述基板的背面获取所述区域的IR光学显微镜图像; （c）将IR光学显微镜图像与铣削系统的坐标系对准; 和（d）使用在IR光学显微镜图像中可见的结构作为指导，操作铣削系统以从IC器件背面暴露所选特征而不干扰相邻特征。

    Method for structured energy transmission using electron beams
    8.
    发明授权
    Method for structured energy transmission using electron beams 失效
    使用电子束的结构化能量传输方法

    公开(公告)号：US06423968B1

    公开(公告)日：2002-07-23

    申请号：US09284300

    申请日：1999-04-09

    申请人： Siegfried Panzer ,  Jürgen Dånhardt

    发明人： Siegfried Panzer ,  Jürgen Dånhardt

    IPC分类号： H01J3730

    CPC分类号： H01J37/317 ,  H01J37/1472 ,  H01J37/30 ,  H01J2237/316

    摘要： Multiple methods are known to process materials or alter their properties using an electron beam. Until now, it was not possible to impinge upon minuscule surface sections (pixel) with a given arrangement on the surface in order to achieve certain effects. According to the invention, the object to be impinged upon is moved contact-free under a mask. A bidimensional deflectable electron beam oscillating at a high frequency perpendicular to the direction of movement of the object is moved on the mask, the speed being essentially faster than that of the movement of the object. Said method can be used for processing any material, preferably plane or band-shaped objects, in order to achieve processing effects by means of physical or chemical reaction.

    摘要翻译： 已知使用电子束处理材料或改变其性质的多种方法。 到目前为止，不可能以表面上给定的布置撞击微小的表面部分（像素），以获得一定的效果。 根据本发明，待掩盖的物体在掩模下无接触地移动。 在垂直于物体的移动方向的高频振荡的二维可偏转电子束在掩模上移动，速度基本上快于物体运动的速度。 所述方法可用于处理任何材料，优选平面或带状物体，以便通过物理或化学反应获得加工效果。

    Electron beam aperture element
    9.
    发明授权
    Electron beam aperture element 失效
    电子束孔径元件

    公开(公告)号：US06376850B1

    公开(公告)日：2002-04-23

    申请号：US09423830

    申请日：1999-11-16

    申请人： Tao Zhang

    发明人： Tao Zhang

    IPC分类号： H01J3730

    CPC分类号： H01J37/09 ,  H01J2237/3175

    摘要： An electron beam aperture element (10) comprises a body (11) provided with a passage (12) for an electron beam (E) and with a blocking surface (15) for blocking travel of part or all of the beam otherwise than through the passage. The blocking surface (15) is angled to cause departing electrons derived from the blocked beam or part thereof to be directed away from the axis (13) of the passage and, in particular, into an electron trap cavity (21) bounded by the surface (15) and a wall of a screening member (17). The wall returns electrons to the blocking surface (15) for redirection back into the cavity (21), thus preventing escape of scattered electrons or delaying their escape until sufficient absorption has taken place to render them largely harmless to the interior environment of an electron beam column equipped with the element.

    摘要翻译： 电子束孔元件（10）包括：主体（11），其设置有用于电子束（E）的通道（12），并具有阻挡表面（15），用于阻止部分或全部光束的行进， 通道。 阻挡表面（15）成角度以使来自阻挡梁或其一部分的离开的电子被引导离开通道的轴线（13），并且特别是引导到由表面限定的电子捕获腔（21） （15）和屏蔽构件（17）的壁。 壁将电子返回到阻挡表面（15）以重定向回到空腔（21）中，从而防止散射电子的逸出或延迟它们的逸出，直到发生足够的吸收，使得它们对电子束的内部环境无害化 列配有元素。

    Rutherford backscattering detection for use in Ion implantation
    10.
    发明授权
    Rutherford backscattering detection for use in Ion implantation 有权
    卢瑟福背散射检测用于离子注入

    公开(公告)号：US06255662B1

    公开(公告)日：2001-07-03

    申请号：US09179314

    申请日：1998-10-27

    申请人： Leonard Michael Rubin ,  Shaun Dean Wilson ,  Yuri Erokhin

    发明人： Leonard Michael Rubin ,  Shaun Dean Wilson ,  Yuri Erokhin

    IPC分类号： H01J3730

    CPC分类号： H01J37/3171 ,  H01J37/304

    摘要： A Rutherford backscattering detector for determining the angle of incidence between an ion beam and the crystalline lattice structure of a semiconductor workpiece. A process chamber defines a chamber interior into which one or more workpieces can be inserted for ion treatment, and a rotating workpiece support is disposed within the process chamber for mounting one or more semiconductor workpieces. An energy source sets up an ion plasma from which is created an ion beam which is caused to impact the surface of the semiconductor workpiece. A Rutherford backscattering detector measures the intensity of backscattered particles and the backscattered ion intensity is correlated to an angle of incidence between the ion beam and the crystalline structure of the semiconductor workpiece.

    摘要翻译： 一种用于确定离子束与半导体工件的晶格结构之间的入射角的卢瑟福反向散射检测器。 处理室限定室内部，一个或多个工件可以插入其中用于离子处理，并且旋转工件支撑件设置在处理室内，用于安装一个或多个半导体工件。 能量源设置离子等离子体，从而产生离子束，该离子束被撞击半导体工件的表面。 卢瑟福背散射检测器测量背散射粒子的强度，背散射离子强度与离子束与半导体工件的晶体结构之间的入射角相关。