发明授权
- 专利标题: Nitrogen-doped hydrogenated carbon films by ion beam deposition
- 专利标题(中): 通过离子束沉积的氮掺杂氢化碳膜
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申请号: US09982937申请日: 2001-10-22
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公开(公告)号: US06689425B1公开(公告)日: 2004-02-10
- 发明人: Xiaoding Ma , Kevin J. Grannen , Jing Gui , Jeffrey A. McCann , Mark A. Shows
- 申请人: Xiaoding Ma , Kevin J. Grannen , Jing Gui , Jeffrey A. McCann , Mark A. Shows
- 主分类号: B05D512
- IPC分类号: B05D512
摘要:
Ion beam-deposited, nitrogen-doped C:H films having substantially lower resistivities than undoped ion beam-deposited C:H films and suitable for use as hard, abrasion-resistant overcoat layers for magnetic recording media, such as hard disks, are formed by supplying a mixture of hydrocarbon and nitrogen gases to an ion beam generator. Nitrogen atom content of the films is controlled to within from about 5 to about 25 at. % by appropriate selection of the ratio of hydrocarbon gas flow to nitrogen gas flow. The resultant IBD i-C:HN films exhibit a reduced tendency for charge build-up thereon during hard disk operation by virtue of their lower resistivity vis-à-vis conventional a-C:H materials.
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