公开(公告)号：US06312798B1

公开(公告)日：2001-11-06

申请号：US09400187

申请日：1999-09-21

申请人： Xiaoding Ma ,  Kevin J. Grannen ,  Jing Gui ,  Jeffrey A. McCann ,  Mark A. Shows

发明人： Xiaoding Ma ,  Kevin J. Grannen ,  Jing Gui ,  Jeffrey A. McCann ,  Mark A. Shows

IPC分类号： G11B572

CPC分类号： G11B5/72 ,  Y10T428/265 ,  Y10T428/30

摘要： Ion beam-deposited, nitrogen-doped C:H films having substantially lower resistivities than undoped ion beam-deposited C:H films and suitable for use as hard, abrasion-resistant overcoat layers for magnetic recording media, such as hard disks, are formed by supplying a mixture of hydrocarbon and nitrogen gases to an ion beam generator. Nitrogen atom content of the films is controlled to within from about 5 to about 25 at. % by appropriate selection of the ratio of hydrocarbon gas flow to nitrogen gas flow. The resultant IBD i-C:HN films exhibit a reduced tendency for charge build-up thereon during hard disk operation by virtue of their lower resistivity vis-à-vis conventional a-C:H materials.

摘要翻译： 离子束沉积的氮掺杂的C：H膜具有比未掺杂的离子束沉积的C：H膜具有显着更低的电阻率，并且适合用作硬记录介质（例如硬盘）的硬的，耐磨损的外涂层 通过向离子束发生器提供烃和氮气的混合物。 将膜的氮原子含量控制在约5至约25at。 通过适当选择碳氢化合物气体流量与氮气流量的比例来确定。 所得到的IBD i-C：HN膜在硬盘操作期间由于其相对于常规a-C：H材料的较低电阻率而在其上积累电荷降低的倾向。

公开(公告)号：US06982071B2

公开(公告)日：2006-01-03

申请号：US10756466

申请日：2004-01-14

申请人： Xiaoding Ma ,  Kevin J. Grannen ,  Jing Gui ,  Jeffrey A. McCann ,  Mark A. Shows

发明人： Xiaoding Ma ,  Kevin J. Grannen ,  Jing Gui ,  Jeffrey A. McCann ,  Mark A. Shows

IPC分类号： C01B31/06 ,  C23C14/48 ,  C23C14/24 ,  H05H1/46

CPC分类号： G11B5/72 ,  Y10T428/265 ,  Y10T428/30

摘要： Ion beam-deposited, nitrogen-doped C:H films having substantially lower resistivities than undoped ion beam-deposited C:H films and suitable for use as hard, abrasion-resistant overcoat layers for magnetic recording media, such as hard disks, are formed by supplying a mixture of hydrocarbon and nitrogen gases to an ion beam generator. Nitrogen atom content of the films is controlled to within from about 5 to about 25 at. % by appropriate selection of the ratio of hydrocarbon gas flow to nitrogen gas flow. The resultant IBD i-C:HN films exhibit a reduced tendency for charge build-up thereon during hard disk operation by virtue of their lower resistivity vis-à-vis conventional a-C:H materials.

摘要翻译： 离子束沉积的氮掺杂的C：H膜具有比未掺杂的离子束沉积的C：H膜具有显着更低的电阻率，并且适合用作硬记录介质（例如硬盘）的硬的，耐磨损的外涂层 通过向离子束发生器提供烃和氮气的混合物。 将膜的氮原子含量控制在约5至约25at。 通过适当选择碳氢化合物气体流量与氮气流量的比例来确定。 所得到的IBD i-C：HN膜在硬盘操作期间由于其相对于常规a-C：H材料的较低电阻率而在其上积累电荷降低的倾向。

公开(公告)号：US06689425B1

公开(公告)日：2004-02-10

申请号：US09982937

申请日：2001-10-22

申请人： Xiaoding Ma ,  Kevin J. Grannen ,  Jing Gui ,  Jeffrey A. McCann ,  Mark A. Shows

发明人： Xiaoding Ma ,  Kevin J. Grannen ,  Jing Gui ,  Jeffrey A. McCann ,  Mark A. Shows

IPC分类号： B05D512

CPC分类号： G11B5/72 ,  Y10T428/265 ,  Y10T428/30

摘要： Ion beam-deposited, nitrogen-doped C:H films having substantially lower resistivities than undoped ion beam-deposited C:H films and suitable for use as hard, abrasion-resistant overcoat layers for magnetic recording media, such as hard disks, are formed by supplying a mixture of hydrocarbon and nitrogen gases to an ion beam generator. Nitrogen atom content of the films is controlled to within from about 5 to about 25 at. % by appropriate selection of the ratio of hydrocarbon gas flow to nitrogen gas flow. The resultant IBD i-C:HN films exhibit a reduced tendency for charge build-up thereon during hard disk operation by virtue of their lower resistivity vis-à-vis conventional a-C:H materials.

摘要翻译： 离子束沉积的氮掺杂的C：H膜具有比未掺杂的离子束沉积的C：H膜具有显着更低的电阻率，并且适合用作硬记录介质（例如硬盘）的硬的，耐磨损的外涂层 通过向离子束发生器提供烃和氮气的混合物。 将膜的氮原子含量控制在约5至约25at。 通过适当选择碳氢化合物气体流量与氮气流量的比例来确定。 所得到的IBD i-C：HN膜在硬盘操作期间由于其相对于常规a-C：H材料的较低电阻率而在其上积累电荷降低的倾向。