发明授权
US06689694B1 Micromechanical system fabrication method using (111) single crystalline silicon 有权
(111)单晶硅的微机械系统制造方法

  • 专利标题: Micromechanical system fabrication method using (111) single crystalline silicon
  • 专利标题(中): (111)单晶硅的微机械系统制造方法
  • 申请号: US09715446
    申请日: 2000-11-17
  • 公开(公告)号: US06689694B1
    公开(公告)日: 2004-02-10
  • 发明人: Dong-Il ChoSangwoo LeeSangjun Park
  • 申请人: Dong-Il ChoSangwoo LeeSangjun Park
  • 优先权: KR98-11519 19980401
  • 主分类号: H01L21311
  • IPC分类号: H01L21311
Micromechanical system fabrication method using (111) single crystalline silicon
摘要:
Disclosed is a micromechanical system fabrication method using (111) single crystalline silicon as a silicon substrate and employing a reactive ion etching process in order to pattern a microstructure that will be separated from the silicon substrate and a selective release-etching process utilizing an aqueous alkaline solution in order to separate the microstructure from the silicon substrate. According to the micromechanical system fabrication method of the present invention, the side surfaces of microstructures can be formed to be vertical by employing the RIE technique. Furthermore, the microstructures can be readily separated from the silicon substrate by employing the selective release-etching technique using slow etching {111} planes as the etch stop in an aqueous alkaline solution. In addition, etched depths can be adjusted during the RIE step, thereby adjusting the thickness of the microstructure and the spacing between the microstructure and the silicon substrate.
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