发明授权
US06693030B1 Reactive preclean prior to metallization for sub-quarter micron application
失效
金属化之前的反应性预清洗用于二分之一微米的应用
- 专利标题: Reactive preclean prior to metallization for sub-quarter micron application
- 专利标题(中): 金属化之前的反应性预清洗用于二分之一微米的应用
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申请号: US09617522申请日: 2000-07-14
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公开(公告)号: US06693030B1公开(公告)日: 2004-02-17
- 发明人: Suchitra Subrahmanyan , Liang-Yuh Chen , Roderick Craig Mosely
- 申请人: Suchitra Subrahmanyan , Liang-Yuh Chen , Roderick Craig Mosely
- 主分类号: H01L214763
- IPC分类号: H01L214763
摘要:
The present invention generally provides a precleaning process prior to moralization for submicron features on substrates. The method includes cleaning the submicron features with radicals from a plasma of a reactive gas such as oxygen, a mixture of CF4/O2, or a mixture of He/NF3, wherein the plasma is preferably generated by a remote plasma source and the radicals are delivered to a chamber in which the substrate is disposed. Native oxides remaining in the submicron features are preferably reduced in a second step by treatment with radicals from a plasma containing hydrogen. Following the first or both precleaning steps, the features can be filled with metal by available moralization techniques which typically include depositing a barrier/liner layer on exposed dielectric surfaces prior to deposition of aluminum, copper, or tungsten. The precleaning and moralization steps can be conducted on available integrated processing platforms.