发明授权
- 专利标题: Self-aligned STI for narrow trenches
- 专利标题(中): 用于窄沟槽的自对准STI
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申请号: US09885790申请日: 2001-06-20
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公开(公告)号: US06693041B2公开(公告)日: 2004-02-17
- 发明人: Ramachandra Divakaruni , Jack A. Mandelman , Carl J. Radens
- 申请人: Ramachandra Divakaruni , Jack A. Mandelman , Carl J. Radens
- 主分类号: H01L21311
- IPC分类号: H01L21311
摘要:
A self-aligned shallow trench isolation region for a memory cell array is formed by etching a plurality of vertical deep trenches in a substrate and coating the trenches with an oxidation barrier layer. The oxidation barrier layer is recessed in portions of the trenches to expose portions of the substrate in the trenches. The exposed portions of the substrate are merged by oxidization into thermal oxide regions to form the self-aligned shallow trench isolation structure which isolates adjacent portions of substrate material. The merged oxide regions are self-aligned as they automatically aligned to the edges of the deep trenches when merged together to define the location of the isolation region within the memory cell array during IC fabrication. The instant self-aligned shallow trench isolation structure avoids the need for an isolation mask to separate or isolate the plurality of trenches within adjacent active area rows on a single substrate.
公开/授权文献
- US20020197874A1 Self-aligned sti for narrow trenches 公开/授权日:2002-12-26