A method of manufacturing a semiconductor device includes the steps of: (X) forming a first hydrophobic insulating layer above a semiconductor substrate; (Y) hydrophilizing a surface of the first hydrophobic insulating layer; and (Z) forming a low dielectric constant insulating layer having a specific dielectric constant lower than the specific dielectric constant of silicon oxide on the first hydrophobic insulating layer having a bydrophilized surface. A semiconductor device manufacturing method which can suppress peel-off of a low dielectric constant insulating layer from an underlying hydrophobic layer is provided.