发明授权
US06696916B2 Integrated vertical resistor structure with reduced dimensions, for high voltage, and manufacturing process thereof
有权
集成的垂直电阻器结构，具有减小的尺寸，用于高电压及其制造工艺
- 专利标题： Integrated vertical resistor structure with reduced dimensions, for high voltage, and manufacturing process thereof
- 专利标题（中）： 集成的垂直电阻器结构，具有减小的尺寸，用于高电压及其制造工艺
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申请号： US09746373申请日： 2000-12-22
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公开(公告)号： US06696916B2公开(公告)日： 2004-02-24
- 发明人: Delfo Sanfilippo , Davide Patti
- 申请人： Delfo Sanfilippo , Davide Patti
- 优先权： ITTO99A1151 19991224
- 主分类号： H01C1012
- IPC分类号： H01C1012
摘要：
The high-voltage resistor is of the vertical type, and is formed in a chip which includes a high-voltage region and a low-voltage region superimposed on the high-voltage region, both having a first conductivity type. An isolation region, at least partially buried, extends between the high-voltage region and the low-voltage region, and delimits a vertical resistive region connecting the high-voltage region to the low-voltage region.
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