Invention Grant
US06696916B2 Integrated vertical resistor structure with reduced dimensions, for high voltage, and manufacturing process thereof
有权
集成的垂直电阻器结构，具有减小的尺寸，用于高电压及其制造工艺
- Patent Title: Integrated vertical resistor structure with reduced dimensions, for high voltage, and manufacturing process thereof
- Patent Title (中): 集成的垂直电阻器结构，具有减小的尺寸，用于高电压及其制造工艺
-
Application No.: US09746373Application Date: 2000-12-22
-
Publication No.: US06696916B2Publication Date: 2004-02-24
- Inventor: Delfo Sanfilippo , Davide Patti
- Applicant: Delfo Sanfilippo , Davide Patti
- Priority: ITTO99A1151 19991224
- Main IPC: H01C1012
- IPC: H01C1012
Abstract:
The high-voltage resistor is of the vertical type, and is formed in a chip which includes a high-voltage region and a low-voltage region superimposed on the high-voltage region, both having a first conductivity type. An isolation region, at least partially buried, extends between the high-voltage region and the low-voltage region, and delimits a vertical resistive region connecting the high-voltage region to the low-voltage region.
Public/Granted literature
Information query
