发明授权
- 专利标题： Mask set for use in phase shift photolithography technique which is suitable to form random patterns
- 专利标题（中）： 适用于形成随机图案的相移光刻技术中使用的掩模
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申请号： US10315096申请日： 2002-12-10
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公开(公告)号： US06699626B2公开(公告)日： 2004-03-02
- 发明人: Masashi Fujimoto
- 申请人： Masashi Fujimoto
- 优先权： JP11-368228 19991224
- 主分类号： G03F900
- IPC分类号： G03F900
摘要：
A mask set has a first mask including a shielding region shielding a first pattern-defining light; a second mask including a phase-shifting region having a phase shifter edge and a non-phase-shifting region adjacent to the phase-shifting region on the phase shifter edge. A first phase of the first light portion passing through the phase-shifting region differs from a second phase of the second light portion. The first and second masks are aligned such that the phase shifter edge overlaps on the shielding region.
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