Invention Grant
US06699644B1 Process for forming a photoresist pattern comprising alkaline treatment
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用于形成包含碱处理的光致抗蚀剂图案的方法
- Patent Title: Process for forming a photoresist pattern comprising alkaline treatment
- Patent Title (中): 用于形成包含碱处理的光致抗蚀剂图案的方法
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Application No.: US09651443Application Date: 2000-08-30
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Publication No.: US06699644B1Publication Date: 2004-03-02
- Inventor: Geun Su Lee , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
- Applicant: Geun Su Lee , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
- Priority: KR99-36606 19990831
- Main IPC: G03F700
- IPC: G03F700
Abstract:
The present invention provides a method for reducing or eliminating a poor pattern formation on a photoresist film by contacting the photoresist film with an alkaline solution prior to its exposure to light. Methods of the present invention significantly reduce or prevent T-topping and top-loss.
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