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11 条记录 (耗时 0.034 秒)

    Process for forming a fine pattern using a top-coating composition for a photoresist and product formed by same
    1.
    发明授权
    Process for forming a fine pattern using a top-coating composition for a photoresist and product formed by same 失效
    使用用于光刻胶的顶涂组合物和由其形成的产品形成精细图案的方法

    公开(公告)号：US07329477B2

    公开(公告)日：2008-02-12

    申请号：US10993869

    申请日：2004-11-19

    申请人： Jae Chang Jung ,  Keun Kyu Kong ,  Hyeong Soo Kim ,  Jin Soo Kim ,  Cha Won Koh ,  Sung Eun Hong ,  Geun Su Lee ,  Min Ho Jung ,  Ki Ho Baik

    发明人： Jae Chang Jung ,  Keun Kyu Kong ,  Hyeong Soo Kim ,  Jin Soo Kim ,  Cha Won Koh ,  Sung Eun Hong ,  Geun Su Lee ,  Min Ho Jung ,  Ki Ho Baik

    IPC分类号： G03F7/00 ,  G03F7/004

    CPC分类号： G03F7/11 ,  G03F7/0045

    摘要： The present invention provides a process for using an amine contamination-protecting top-coating composition. Preferably, the amine contamination-protecting top-coating composition of the present invention comprises an amine contamination-protecting compound. Useful amine contamination-protecting compounds include amine derivatives; amino acid derivatives; amide derivatives; urethane derivatives; urea derivatives; salts thereof; and mixtures thereof. The amine contamination-protecting top-coating composition of the present invention reduces or eliminates problems such as T-topping due to a post exposure delay effect and/or difficulties in forming a fine pattern below 100 nm due to acid diffusion associated with conventional lithography processes involving a photoresist polymer containing an alicyclic main chain using a light source, such as KrF (248 nm), ArF (193 nm), F2 (157 nm), E-beam, ion beam and extremely ultraviolet (EUV).

    摘要翻译： 本发明提供了使用胺类污染物保护性顶涂层组合物的方法。 优选地，本发明的胺污染保护性顶涂剂组合物包含胺污染保护化合物。 有用的胺污染保护化合物包括胺衍生物; 氨基酸衍生物; 酰胺衍生物; 氨基甲酸酯衍生物; 尿素衍生物; 的盐; 及其混合物。 本发明的胺污染保护性顶涂剂组合物由于后曝光延迟效应而降低或消除诸如T形顶部的问题和/或由于与常规光刻工艺相关的酸扩散而难以形成低于100nm的精细图案 涉及使用诸如KrF（248nm），ArF（193nm），F 2 N（157nm），电子束，离子束等的光源的含有脂环族主链的光致抗蚀剂聚合物 紫外线（EUV）。

    Process for forming photoresist pattern by using gas phase amine treatment
    4.
    发明授权
    Process for forming photoresist pattern by using gas phase amine treatment 失效
    通过使用气相胺处理形成光致抗蚀剂图案的方法

    公开(公告)号：US06664031B2

    公开(公告)日：2003-12-16

    申请号：US09852377

    申请日：2001-05-10

    申请人： Jae Chang Jung ,  Cha Won Koh ,  Jin Soo Kim ,  Sung Eun Hong ,  Keun Kyu Kong ,  Ki Ho Baik

    发明人： Jae Chang Jung ,  Cha Won Koh ,  Jin Soo Kim ,  Sung Eun Hong ,  Keun Kyu Kong ,  Ki Ho Baik

    IPC分类号： G03F726

    CPC分类号： G03F7/36

    摘要： A process for producing a photoresist pattern is disclosed. In particular, the disclosed process for forming a photoresist pattern reduces or prevents poor quality photoresist patterns formation, especially when a high light absorbing (i.e., low transmittance) photoresist resin is used. In one aspect, a photoresist film which has been exposed to light is treated with a gas phase basic compound to produce a substantially vertical photoresist pattern.

    摘要翻译： 公开了一种制备光致抗蚀剂图案的方法。 特别地，所公开的形成光致抗蚀剂图案的方法减少或防止质量差的光致抗蚀剂图案形成，特别是当使用高光吸收（即低透光率）光致抗蚀剂树脂时。 在一个方面，已曝光的光致抗蚀剂膜用气相碱性化合物处理以产生基本垂直的光致抗蚀剂图案。

    Additive for photoresist composition for resist flow process
    7.
    发明授权
    Additive for photoresist composition for resist flow process 失效
    光刻胶组合物用于抗蚀剂流程的添加剂

    公开(公告)号：US06770414B2

    公开(公告)日：2004-08-03

    申请号：US09878803

    申请日：2001-06-11

    申请人： Min Ho Jung ,  Sung Eun Hong ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

    发明人： Min Ho Jung ,  Sung Eun Hong ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

    IPC分类号： G03F700

    CPC分类号： G03F7/0395 ,  C07J9/00 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115 ,  Y10T428/24802

    摘要： The present invention provides an additive for a photoresist composition for a resist flow process. A compound of following Formula 1 having low glass transition temperature is added to a photoresist composition containing a polymer which is not suitable for the resist flow process due to its high glass transition temperature, thus improving a flow property of the photoresist composition. As a result, the photoresist composition comprising an additive of Formula 1 can be used for the resist flow process. wherein, A, B, R and R′ are as defined in the specification of the invention.

    摘要翻译： 本发明提供了用于抗蚀剂流动方法的光致抗蚀剂组合物的添加剂。 将具有低玻璃化转变温度的下述式1化合物加入含有聚合物的光致抗蚀剂组合物中，该聚合物由于其玻璃化转变温度高而不适于抗蚀剂流动过程，从而改善光致抗蚀剂组合物的流动性能。 结果，包含式1的添加剂的光致抗蚀剂组合物可用于抗蚀剂流动过程。其中A，B，R和R'如本发明的说明书中所定义。

    Water soluble resin composition and method for pattern formation using the same
    8.
    发明授权
    Water soluble resin composition and method for pattern formation using the same 有权
    水溶性树脂组合物及其形成方法

    公开(公告)号：US07745093B2

    公开(公告)日：2010-06-29

    申请号：US11547707

    申请日：2005-04-08

    申请人： Takeshi Nishibe ,  Sung Eun Hong ,  Yusuke Takano ,  Tetsuo Okayasu

    发明人： Takeshi Nishibe ,  Sung Eun Hong ,  Yusuke Takano ,  Tetsuo Okayasu

    IPC分类号： G03F7/40 ,  G03F7/11

    CPC分类号： G03F7/40 ,  H01L21/0273 ,  Y10S430/106 ,  Y10S430/11 ,  Y10S430/115 ,  Y10S430/162 ,  Y10S430/165

    摘要： In the present invention, in a water soluble resin composition for use in a method for pattern formation in which a covering layer is provided on a resist pattern formed of a radiation-sensitive resin composition capable of coping with ArF exposure to increase the width of the resist pattern and thus to realize effective formation of higher density trench or hole pattern, the size reduction level of the resist pattern layer can be further increased as compared with that in the prior art technique, and, in addition, the size reduction level dependency of the coarse-and-fine resist pattern can be reduced. A method for pattern formation using the water soluble resin composition is also provided. The water soluble resin composition which is usable for the method for pattern formation applicable to ArF excimer laser irradiation comprises a water soluble resin, an acid generating agent capable of generating an acid upon heating, a surfactant, a crosslinking agent, and a water-containing solvent.

    摘要翻译： 在本发明中，在用于图案形成方法的水溶性树脂组合物中，其中在由能够应对ArF曝光的辐射敏感性树脂组合物形成的抗蚀剂图案上设置覆盖层以增加其宽度 抗蚀剂图案，从而实现有效形成更高密度的沟槽或孔图案，与现有技术相比，抗蚀剂图案层的尺寸减小水平可以进一步提高，另外，尺寸缩小级依赖性 可以减少粗细和抗蚀剂图案。 还提供了使用水溶性树脂组合物的图案形成方法。 可用于适用于ArF准分子激光照射的图案形成方法的水溶性树脂组合物包括水溶性树脂，加热时能产生酸的酸产生剂，表面活性剂，交联剂和含水的 溶剂。

    Composition for Coating over a Photoresist Pattern
    9.
    发明申请
    Composition for Coating over a Photoresist Pattern 有权
    用于在光刻胶图案上涂覆的组合物

    公开(公告)号：US20090317739A1

    公开(公告)日：2009-12-24

    申请号：US12141307

    申请日：2008-06-18

    申请人： Muthiah Thiyagarajan ,  Yi Cao ,  Sung Eun Hong ,  Ralph R. Dammel

    发明人： Muthiah Thiyagarajan ,  Yi Cao ,  Sung Eun Hong ,  Ralph R. Dammel

    IPC分类号： G03F7/004 ,  C08F26/02 ,  C08K5/17 ,  C08K5/05

    CPC分类号： C09D133/14 ,  C09D133/066 ,  C09D139/00 ,  G03F7/40

    摘要： The present invention relates to an aqueous coating composition for coating a photoresist pattern, comprising a polymer comprising at least one unit with an alkylamino group, where the unit has a structure (1), where, R1 to R5 are independently selected from hydrogen and C1 to C6 alkyl, and W is C1 to C6 alkyl. The invention also relates to a process for imaging a photoresist layer using the present composition.

    摘要翻译： 本发明涉及用于涂覆光致抗蚀剂图案的水性涂料组合物，其包含含有至少一个具有烷基氨基的单元的聚合物，其中该单元具有结构（1），其中R 1至R 5独立地选自氢和C 1 至C6烷基，W为C1至C6烷基。 本发明还涉及使用本发明组合物对光致抗蚀剂层进行成像的方法。

    Composition for coating over a photoresist pattern
    10.
    发明授权
    Composition for coating over a photoresist pattern 有权
    用于在光致抗蚀剂图案上涂覆的组合物

    公开(公告)号：US07745077B2

    公开(公告)日：2010-06-29

    申请号：US12141307

    申请日：2008-06-18

    申请人： Muthiah Thiyagarajan ,  Yi Cao ,  Sung Eun Hong ,  Ralph R. Dammel

    发明人： Muthiah Thiyagarajan ,  Yi Cao ,  Sung Eun Hong ,  Ralph R. Dammel

    IPC分类号： G03F7/30

    CPC分类号： C09D133/14 ,  C09D133/066 ,  C09D139/00 ,  G03F7/40

    摘要： The present invention relates to an aqueous coating composition for coating a photoresist pattern, comprising a polymer comprising at least one unit with an alkylamino group, where the unit has a structure (1), where, R1 to R5 are independently selected from hydrogen and C1 to C6 alkyl, and W is C1 to C6 alkyl. The invention also relates to a process for imaging a photoresist layer using the present composition.

    摘要翻译： 本发明涉及用于涂覆光致抗蚀剂图案的水性涂料组合物，其包含含有至少一个具有烷基氨基的单元的聚合物，其中该单元具有结构（1），其中R 1至R 5独立地选自氢和C 1 至C6烷基，W为C1至C6烷基。 本发明还涉及使用本发明组合物对光致抗蚀剂层进行成像的方法。