发明授权
- 专利标题： Method of making a low dielectric insulation layer
- 专利标题（中）： 制造低介电绝缘层的方法
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申请号： US10141578申请日： 2002-05-09
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公开(公告)号： US06703302B2公开(公告)日： 2004-03-09
- 发明人: Hideshi Miyajima , Miyoko Shimada , Rempei Nakata
- 申请人： Hideshi Miyajima , Miyoko Shimada , Rempei Nakata
- 优先权： JP2001-140275 20010510; JP2001-151918 20010522
- 主分类号： H01L214763
- IPC分类号： H01L214763
摘要：
A method for manufacturing a semiconductor device, comprising forming a low dielectric constant insulating film containing Si atoms over a semiconductor substrate, heating the low dielectric constant insulating film while irradiating the low dielectric constant insulating film with an electron beam, and exposing the low dielectric constant insulating film during or after the heating to a gas promoting the bond formation of the Si atoms.
公开/授权文献
- US20020173138A1 Method for manufacturing a semiconductor device 公开/授权日：2002-11-21
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