公开(公告)号：US07534717B2

公开(公告)日：2009-05-19

申请号：US11094182

申请日：2005-03-31

申请人： Hideshi Miyajima ,  Keiji Fujita ,  Hideaki Masuda ,  Rempei Nakata ,  Miyoko Shimada

发明人： Hideshi Miyajima ,  Keiji Fujita ,  Hideaki Masuda ,  Rempei Nakata ,  Miyoko Shimada

IPC分类号： H01L21/31 ,  H01L21/4763

CPC分类号： H01L21/02118 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76835

摘要： The formation of an interlayer insulating film above a substrate, the formation of an insulating film of an organic material on the interlayer insulating film thereafter, and the irradiation of the insulating film of an organic material and the interlayer insulating film with electron beams, thereby curing at least the insulating film of an organic material, are proposed.

摘要翻译： 在基板上形成层间绝缘膜，此后在层间绝缘膜上形成有机材料的绝缘膜，用电子束照射有机材料的绝缘膜和层间绝缘膜，从而固化 至少提出了有机材料的绝缘膜。

公开(公告)号：US20050250311A1

公开(公告)日：2005-11-10

申请号：US11094182

申请日：2005-03-31

申请人： Hideshi Miyajima ,  Keiji Fujita ,  Hideaki Masuda ,  Rempei Nakata ,  Miyoko Shimada

发明人： Hideshi Miyajima ,  Keiji Fujita ,  Hideaki Masuda ,  Rempei Nakata ,  Miyoko Shimada

IPC分类号： H01L21/768 ,  H01L21/20 ,  H01L21/312

CPC分类号： H01L21/02118 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76835

摘要： The formation of an interlayer insulating film above a substrate, the formation of an insulating film of an organic material on the interlayer insulating film thereafter, and the irradiation of the insulating film of an organic material and the interlayer insulating film with electron beams, thereby curing at least the insulating film of an organic material, are proposed.

摘要翻译： 在基板上形成层间绝缘膜，此后在层间绝缘膜上形成有机材料的绝缘膜，用电子束照射有机材料的绝缘膜和层间绝缘膜，从而固化 至少提出了有机材料的绝缘膜。

公开(公告)号：US06784092B2

公开(公告)日：2004-08-31

申请号：US10105432

申请日：2002-03-26

申请人： Hideshi Miyajima ,  Miyoko Shimada ,  Rempei Nakata

发明人： Hideshi Miyajima ,  Miyoko Shimada ,  Rempei Nakata

IPC分类号： H01L214763

CPC分类号： H01L21/02137 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/3122 ,  H01L21/76825 ,  H01L21/76828

摘要： Disclosed is a method for forming an insulating layer, including coating a substrate with an insulating film material to form a coated film, the insulating film material containing at least first and second polymers differing from each other in average molecular weight, and heating the coated film while irradiating the coated film with an electron beam.

摘要翻译： 公开了一种形成绝缘层的方法，包括用绝缘膜材料涂覆基板以形成涂膜，所述绝缘膜材料至少包含第一和第二聚合物的平均分子量彼此不同，并且加热涂膜 同时用电子束照射涂膜。

公开(公告)号：US06746969B2

公开(公告)日：2004-06-08

申请号：US09982003

申请日：2001-10-19

申请人： Miyoko Shimada ,  Hideshi Miyajima ,  Rempei Nakata ,  Hideto Matsuyama ,  Katsuya Okumura ,  Masahiko Hasunuma ,  Nobuo Hayasaka

发明人： Miyoko Shimada ,  Hideshi Miyajima ,  Rempei Nakata ,  Hideto Matsuyama ,  Katsuya Okumura ,  Masahiko Hasunuma ,  Nobuo Hayasaka

IPC分类号： H01L2131

CPC分类号： H01L21/02351 ,  H01L21/02126 ,  H01L21/02137 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/2636 ,  H01L21/3122 ,  H01L21/316 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76834

摘要： A method of manufacturing a semiconductor device comprises preparing a substrate to be treated, and forming an insulation film above the substrate, which includes applying an insulation film raw material above the substrate, the insulation film raw material including a substance or a precursor of the substance, the insulation film comprising the substance, curing the insulation film raw material by irradiating an electron beam on the substrate while heating the substrate in a reactor chamber, changing at least one of parameter selected from the group consisting of pressure in the reactor chamber, temperature of the substrate, type of gas having the substrate exposed thereto, flow rate of gas introduced into the reactor chamber, position of the substrate, and quantity of electrons incident to the substrate per unit time when the electron beam is being irradiated on the substrate.

摘要翻译： 一种制造半导体器件的方法包括：准备待处理的衬底，以及在衬底上方形成绝缘膜，该绝缘膜包括在衬底上施加绝缘膜原料，所述绝缘膜原料包括物质或物质的前体 所述绝缘膜包含该物质，通过在反应器室中加热基板同时在基板上照射电子束来固化绝缘膜原料，改变选自反应器室中的压力，温度 的基板，当电子束被照射在基板上时，具有暴露于其中的基板的气体类型，引入反应室的气体流量，基板的位置和每单位时间入射到基板的电子量。

公开(公告)号：US06703302B2

公开(公告)日：2004-03-09

申请号：US10141578

申请日：2002-05-09

申请人： Hideshi Miyajima ,  Miyoko Shimada ,  Rempei Nakata

发明人： Hideshi Miyajima ,  Miyoko Shimada ,  Rempei Nakata

IPC分类号： H01L214763

CPC分类号： H01L21/76825 ,  H01L21/76828

摘要： A method for manufacturing a semiconductor device, comprising forming a low dielectric constant insulating film containing Si atoms over a semiconductor substrate, heating the low dielectric constant insulating film while irradiating the low dielectric constant insulating film with an electron beam, and exposing the low dielectric constant insulating film during or after the heating to a gas promoting the bond formation of the Si atoms.

摘要翻译： 一种制造半导体器件的方法，包括在半导体衬底上形成含有Si原子的低介电常数绝缘膜，在用电子束照射低介电常数绝缘膜的同时加热低介电常数绝缘膜，并暴露低介电常数 绝缘膜在加热期间或之后至促进Si原子的键形成的气体。

公开(公告)号：US06436849B1

公开(公告)日：2002-08-20

申请号：US09963385

申请日：2001-09-27

申请人： Masahiko Hasunuma ,  Hideshi Miyajima ,  Hisashi Kaneko ,  Rempei Nakata

发明人： Masahiko Hasunuma ,  Hideshi Miyajima ,  Hisashi Kaneko ,  Rempei Nakata

IPC分类号： H01L2131

CPC分类号： H01L21/67253 ,  H01L21/67017 ,  H01L21/76828

摘要： A method for manufacturing a semiconductor device, comprising controlling a humidity in an atmosphere around a low dielectric constant insulating film at 30% or less, during a processing period and a transfer period between processing equipments, in which at least a part of said low dielectric constant insulating film is exposed to the atmosphere.

摘要翻译： 一种制造半导体器件的方法，包括在处理期间和处理设备之间的转移期间，在低介电常数绝缘膜周围的气氛中控制30％以下的湿度，其中至少部分所述低电介质 恒定绝缘膜暴露在大气中。

公开(公告)号：US07094681B2

公开(公告)日：2006-08-22

申请号：US10701476

申请日：2003-11-06

申请人： Keiji Fujita ,  Rempei Nakata ,  Hideshi Miyajima

发明人： Keiji Fujita ,  Rempei Nakata ,  Hideshi Miyajima

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/02126 ,  H01L21/02137 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02351 ,  H01L21/31695 ,  H01L21/7682 ,  H01L23/53228 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, a porous insulating film formed above the semiconductor substrate, the porous insulating film having a relative dielectric constant of 2.5 or less and including a first insulating material, at least a portion of pores in the porous insulating film having on the inner wall thereof a layer of a second insulating material which differs in nature from the first insulating material, and a plug and/or a wiring layer buried in the porous insulating film.

摘要翻译： 公开了一种半导体器件，包括半导体衬底，形成在半导体衬底上的多孔绝缘膜，多孔绝缘膜的相对介电常数为2.5或更小，并且包括第一绝缘材料，多孔绝缘体中的至少一部分孔 在其内壁上具有与第一绝缘材料不同的第二绝缘材料层，以及埋在多孔绝缘膜中的插塞和/或布线层。

公开(公告)号：US06962870B2

公开(公告)日：2005-11-08

申请号：US10757534

申请日：2004-01-15

申请人： Hideaki Masuda ,  Hideshi Miyajima ,  Rempei Nakata

发明人： Hideaki Masuda ,  Hideshi Miyajima ,  Rempei Nakata

IPC分类号： H01L23/522 ,  H01L21/00 ,  H01L21/312 ,  H01L21/314 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L21/76835 ,  H01L21/76807 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device comprising forming a protective film on a surface of a lower-layer interconnection, and forming a multilayer-structured film by stacking a first porous film, a first non-porous film, a second porous film, and a second non-porous film on a surface of the protective film in this order, and forming a via hole and an interconnect trench. After a resist mask is removed, protective film exposed at a bottom of the via hole is removed. An upper-layer interconnection of dual damascene structure is formed by embedding an interconnect material in the via hole and the interconnect trench.The first non-porous film includes a first layer has a high etching selectivity ratio relative to the protective film, and a second layer has a high etching selectivity ratio relative to the resist mask and the second porous film.

摘要翻译： 一种制造半导体器件的方法，包括在下层互连表面上形成保护膜，并通过堆叠第一多孔膜，第一无孔膜，第二多孔膜和第二多孔膜形成多层结构膜 在保护膜的表面上依次形成第二无孔膜，形成通孔和配线沟槽。 在去除抗蚀剂掩模之后，去除在通孔底部露出的保护膜。 通过在通孔和互连沟槽中嵌入互连材料来形成双镶嵌结构的上层互连。 第一无孔膜包括第一层相对于保护膜具有高的蚀刻选择比，第二层相对于抗蚀剂掩模和第二多孔膜具有高蚀刻选择性比。

公开(公告)号：US06558747B2

公开(公告)日：2003-05-06

申请号：US10014593

申请日：2001-12-14

申请人： Rempei Nakata ,  Nobuhide Yamada ,  Hideshi Miyajima ,  Akihiro Kojima ,  Takahiko Kurosawa ,  Eiji Hayashi ,  Youngsoon Seo ,  Atsushi Shiota ,  Kinji Yamada

发明人： Rempei Nakata ,  Nobuhide Yamada ,  Hideshi Miyajima ,  Akihiro Kojima ,  Takahiko Kurosawa ,  Eiji Hayashi ,  Youngsoon Seo ,  Atsushi Shiota ,  Kinji Yamada

IPC分类号： B05D379397

CPC分类号： C08G77/16 ,  C09D183/06 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  Y10T428/31663

摘要： A method of forming an insulating film which includes the steps of: dissolving in a solvent a first and second polymer which each comprise methylpolysiloxane as the main component and one of which has a weight average molecular weight at least 10 times that of the other to thereby prepare a chemical solution; applying the chemical solution to a semiconductor substrate to form a coating film; and heat-treating the coating film to thereby form an organosilicon oxide film. The weight-average molecular weight of the first polymer is preferably at least 100 times that of the second polymer. Thus, an insulating organosilicon oxide film having a low dielectric constant and high cracking resistance is formed from a coating fluid.

公开(公告)号：US06534870B1

公开(公告)日：2003-03-18

申请号：US09594843

申请日：2000-06-15

申请人： Yoshiaki Shimooka ,  Noriaki Matsunaga ,  Hideki Shibata ,  Rempei Nakata ,  Hideshi Miyajima ,  Motonobu Kawai

发明人： Yoshiaki Shimooka ,  Noriaki Matsunaga ,  Hideki Shibata ,  Rempei Nakata ,  Hideshi Miyajima ,  Motonobu Kawai

IPC分类号： H01L23485

CPC分类号： H01L23/53223 ,  H01L23/5226 ,  H01L23/53214 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： Al wirings of first to fifth layers are formed on a P—SiO2 film, and FSG films are formed between the wiring layers. An organic silicon oxide film is formed between wirings in one same wiring layer. The Al wirings in the first and second layers have a carbon concentration of 22 wt %, and the Al wirings in the third to fifth layers have a carbon concentration of 20 wt %.

摘要翻译： 在P-SiO 2膜上形成第一至第五层的Al布线，并且在布线层之间形成FSG膜。 在一个相同的布线层中的布线之间形成有机氧化硅膜。 第一层和第二层的Al配线的碳浓度为22重量％，第三至第五层的Al配线的碳浓度为20重量％。