发明授权
- 专利标题： Method to neutralize charge imbalance following a wafer cleaning process
- 专利标题（中）： 中和晶圆清洗过程后电荷不平衡的方法
-
申请号： US10356248申请日： 2003-01-30
-
公开(公告)号： US06703317B1公开(公告)日： 2004-03-09
- 发明人: Yi-Lung Cheng , Ming-Hwa Yoo , Sze-An Wu , Ying-Lung Wang
- 申请人： Yi-Lung Cheng , Ming-Hwa Yoo , Sze-An Wu , Ying-Lung Wang
- 主分类号： H01L21302
- IPC分类号： H01L21302
摘要：
A method of reducing an electrical charge imbalance on a wafer process surface including providing a semiconductor wafer having a process surface including an upper most first material layer; cleaning the process surface according to a wafer cleaning process including at least one of spraying and scrubbing to produce an electrical charge imbalance at the process surface; and, subjecting the process surface to a nitrogen containing plasma treatment to at least partially neutralize the electrical charge imbalance.