发明授权
- 专利标题： Semiconductor device having radiation structure
- 专利标题（中）： 具有辐射结构的半导体器件
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申请号： US09717227申请日： 2000-11-22
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公开(公告)号： US06703707B1公开(公告)日： 2004-03-09
- 发明人: Kuniaki Mamitsu , Yasuyoshi Hirai , Kazuhito Nomura , Yutaka Fukuda , Kazuo Kajimoto , Takeshi Miyajima , Tomoatsu Makino , Yoshimi Nakase
- 申请人： Kuniaki Mamitsu , Yasuyoshi Hirai , Kazuhito Nomura , Yutaka Fukuda , Kazuo Kajimoto , Takeshi Miyajima , Tomoatsu Makino , Yoshimi Nakase
- 优先权： JP11-333119 19991124; JP11-333124 19991124; JP2000-088579 20000324; JP2000-097911 20000330; JP2000-097912 20000330; JP2000-305228 20001004
- 主分类号： H01L2334
- IPC分类号： H01L2334
摘要：
A semiconductor device includes two semiconductor chips that are interposed between a pair of radiation members, and thermally and electrically connected to the radiation members. One of the radiation members has two protruding portions and front ends of the protruding portions are connected to principal electrodes of the semiconductor chips. The radiation members are made of a metallic material containing Cu or Al as a main component. The semiconductor chips and the radiation members are sealed with resin with externally exposed radiation surfaces.
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