发明授权
- 专利标题: High temperature drop-off of a substrate
- 专利标题(中): 衬底的高温下降
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申请号: US10291897申请日: 2002-11-08
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公开(公告)号: US06704496B2公开(公告)日: 2004-03-09
- 发明人: Paul Jacobson , Ivo Raaijmakers , Ravinder Aggarwal , Robert C. Haro
- 申请人: Paul Jacobson , Ivo Raaijmakers , Ravinder Aggarwal , Robert C. Haro
- 主分类号: F26B330
- IPC分类号: F26B330
摘要:
A substrate to be processed in a high temperature processing chamber is preheated to avoid the problems associated with thermal shock when the substrate is dropped onto a heated susceptor. Preheating is effected by holding the substrate over a susceptor maintained at or near the processing temperature until the temperature of the substrate approaches the processing temperature. Thus, wafer warping and breakage are greatly reduced, and wafer throughput is improved because of time saved in maintaining the susceptor at constant temperature without cool down and reheat periods.
公开/授权文献
- US20030070758A1 High temperature drop-off of a substrate 公开/授权日:2003-04-17