Invention Grant
US06704913B2 In situ wafer heat for reduced backside contamination 失效
原位晶片加热,减少背面污染

  • Patent Title: In situ wafer heat for reduced backside contamination
  • Patent Title (中): 原位晶片加热,减少背面污染
  • Application No.: US10291166
    Application Date: 2002-11-08
  • Publication No.: US06704913B2
    Publication Date: 2004-03-09
  • Inventor: Kent Rossman
  • Applicant: Kent Rossman
  • Main IPC: G06F1750
  • IPC: G06F1750
In situ wafer heat for reduced backside contamination
Abstract:
A substrate processing system and a computer-readable storage medium for directing operation of a substrate processing system are provided for preparing a substrate for processing. The substrate processing system has a chamber with a substrate receiving portion and systems equipped to implement plasma processes. The computer-readable storage medium has a program that directs operation of the systems. The substrate is positioned within the chamber in a location not on the substrate receiving portion. A gaseous flow is provided to the chamber, from which a plasma is struck to heat the substrate. After the substrate has been heated, it is moved to the substrate receiving portion for processing.
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