Invention Grant
- Patent Title: In situ wafer heat for reduced backside contamination
- Patent Title (中): 原位晶片加热,减少背面污染
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Application No.: US10291166Application Date: 2002-11-08
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Publication No.: US06704913B2Publication Date: 2004-03-09
- Inventor: Kent Rossman
- Applicant: Kent Rossman
- Main IPC: G06F1750
- IPC: G06F1750

Abstract:
A substrate processing system and a computer-readable storage medium for directing operation of a substrate processing system are provided for preparing a substrate for processing. The substrate processing system has a chamber with a substrate receiving portion and systems equipped to implement plasma processes. The computer-readable storage medium has a program that directs operation of the systems. The substrate is positioned within the chamber in a location not on the substrate receiving portion. A gaseous flow is provided to the chamber, from which a plasma is struck to heat the substrate. After the substrate has been heated, it is moved to the substrate receiving portion for processing.
Public/Granted literature
- US20030070619A1 In situ wafer heat for reduced backside contamination Public/Granted day:2003-04-17
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