公开(公告)号：US06821577B2

公开(公告)日：2004-11-23

申请号：US10234988

申请日：2002-09-04

Applicant: Kent Rossman

Inventor： Kent Rossman

IPC: H05H124

CPC classification number: C23C16/45523 ,  C23C16/045 ,  C23C16/402 ,  C23C16/4482 ,  C23C16/45561 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32302 ,  H01J37/32449 ,  H01J37/32862 ,  H01J37/3299 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31051 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/76837

Abstract: A method for depositing a conformal dielectric layer employing a dep-etch technique features selectively decreasing the deposition gas present in a process chamber where a substrate to be covered by the conformal dielectric layer is disposed. By selectively decreasing the deposition gas present in the process chamber, the concentration of a sputtering gas, from which a plasma is formed, in the process chamber is increased. It is preferred that the flow of deposition gases be periodically terminated so as to provide a sputtering gas concentration approaching 100%. In this fashion, the etch rate of a conformal dielectric layer having adequate gap-filling characteristics may be greatly increased, while allowing an increase in the deposition rate of the same.

Abstract translation: 使用去蚀刻技术沉积共形介电层的方法特征在于选择性地降低存在于处理室中的沉积气体，其中设置由保形介电层覆盖的衬底。 通过选择性地减少存在于处理室中的沉积气体，处理室中的形成等离子体的溅射气体的浓度增加。 沉积气体的流动优选地周期性地终止，以提供接近100％的溅射气体浓度。 以这种方式，可以大大增加具有足够的间隙填充特性的保形介电层的蚀刻速率，同时允许其沉积速率的增加。

公开(公告)号：US06696362B2

公开(公告)日：2004-02-24

申请号：US10122058

申请日：2002-04-12

Applicant: Kent Rossman ,  Leonard Jay Olmer ,  Phillip Nguyen

Inventor： Kent Rossman ,  Leonard Jay Olmer ,  Phillip Nguyen

IPC: H01L2131

CPC classification number: C23C16/4404 ,  C23C30/00 ,  H01J37/32477 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76801

Abstract: Methods are provided for identifying root causes of particle issues and for developing particle-robust process recipes in plasma deposition processes. The presence of in situ particles within the substrate processing system is detected over a period of time that spans multiple distinct processing steps in the recipe. The time dependence of in situ particle levels is determined from these results. Then, the processing steps are correlated with the time dependence to identify relative particle levels with the processing steps. This information provides a direct indication of which steps result in the production of particle contaminants so that those steps may be targeted for modification in the development of particle recipes.

Abstract translation: 提供了用于确定颗粒问题的根本原因并开发等离子体沉积工艺中的粒子稳定工艺配方的方法。 在一段时间内检测基底处理系统内原位颗粒的存在，跨越食谱中的多个不同的处理步骤。 从这些结果确定原位颗粒水平的时间依赖性。 然后，处理步骤与时间依赖相关，以利用处理步骤来识别相对颗粒水平。 该信息提供了哪些步骤导致颗粒污染物的产生的直接指示，使得可以将这些步骤用于改进颗粒配方的开发。

公开(公告)号：US07455893B2

公开(公告)日：2008-11-25

申请号：US11580271

申请日：2006-10-11

Applicant: Kent Rossman

Inventor： Kent Rossman

IPC: H05H1/24

CPC classification number: C23C16/45523 ,  C23C16/045 ,  C23C16/402 ,  C23C16/4482 ,  C23C16/45561 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32302 ,  H01J37/32449 ,  H01J37/32862 ,  H01J37/3299 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31051 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/76837

Abstract: A method and apparatus for depositing a conformal dielectric layer employing a dep-etch technique features selectively reducing the flow of deposition gases into a process chamber where a substrate having a stepped surface to be covered by the conformal dielectric layer is disposed. By selectively reducing the flow of deposition gases into the process chamber, the concentration of a sputtering gas, from which a plasma is formed, in the process chamber is increased without increasing the pressure therein. It is preferred that the flow of deposition gases be periodically terminated so as to provide a sputtering gas concentration approaching 100%. In this fashion, the etch rate of a conformal dielectric layer having adequate gap-filling characteristics may be greatly increased, while allowing an increase in the deposition rate of the same.

Abstract translation: 使用去蚀刻技术沉积保形介电层的方法和装置特征在于选择性地减少沉积气体流入处理室，其中设置具有被保形电介质层覆盖的台阶表面的基板。 通过选择性地减少沉积气体进入处理室的流量，在处理室中从其中形成等离子体的溅射气体的浓度增加而不增加其中的压力。 沉积气体的流动优选地周期性地终止，以提供接近100％的溅射气体浓度。 以这种方式，可以大大增加具有足够的间隙填充特性的保形介电层的蚀刻速率，同时允许其沉积速率的增加。

公开(公告)号：US06458722B1

公开(公告)日：2002-10-01

申请号：US09697380

申请日：2000-10-25

Applicant: Bikram Kapoor ,  Kent Rossman

Inventor： Bikram Kapoor ,  Kent Rossman

IPC: H01L2131

CPC classification number: C23C16/401 ,  C23C16/0209 ,  C23C16/402

Abstract: A method and system for forming a layer on a substrate in a process chamber are provided. Deposition gases are provided to the process chamber and permitted to mix in the desired relative concentrations prior to the deposition step, resulting in improved composition uniformity of the layer. This may be accomplished by generating a heating plasma from a first gaseous mixture. The plasma is then terminated and a second gaseous mixture is provided to the process chamber such that the second gaseous mixture is substantially uniformly mixed. A second plasma is then generated from the second gaseous mixture to deposit the layer on the substrate.

Abstract translation: 提供了一种用于在处理室中在基板上形成层的方法和系统。 将沉积气体提供给处理室，并允许在沉积步骤之前以期望的相对浓度混合，从而改善层的组成均匀性。 这可以通过从第一气体混合物产生加热等离子体来实现。 然后等离子体被终止，并且向处理室提供第二气体混合物，使得第二气体混合物基本均匀地混合。 然后从第二气体混合物产生第二等离子体以将该层沉积在衬底上。

公开(公告)号：US07294205B1

公开(公告)日：2007-11-13

申请号：US09362504

申请日：1999-07-27

Applicant: K. V. Ravi ,  Kent Rossman ,  Turgut Sahin ,  Pravin Narwankar

Inventor： K. V. Ravi ,  Kent Rossman ,  Turgut Sahin ,  Pravin Narwankar

IPC: C23C16/50 ,  C23C16/503 ,  C23C16/515 ,  C23C16/40 ,  C23C16/24 ,  H01L21/306 ,  C23F1/00

CPC classification number: H01L21/02164 ,  C23C16/402 ,  C23C16/517 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31612

Abstract: A layer of reduced stress is formed on a substrate using an HDP-CVD system by delaying or interrupting the application of capacitively coupled RF energy. The layer is formed by introducing a process gas into the HDP system chamber and forming a plasma from the process gas by the application of RF power to an inductive coil. After a selected period, a second layer of the film is deposited by maintaining the inductively-coupled plasma and biasing the plasma toward the substrate to enhance the sputtering effect of the plasma. In a preferred embodiment, the deposited film is a silicon oxide film, and biasing is performed by application of capacitively coupled RF power from RF generators to a ceiling plate electrode and wafer support electrode.

Abstract translation: 通过延迟或中断电容耦合RF能量的应用，使用HDP-CVD系统在衬底上形成一层减小的应力。 通过将工艺气体引入HDP系统室并通过将RF功率施加到感应线圈从工艺气体形成等离子体而形成该层。 在选定的时间段之后，通过维持电感耦合等离子体并且将等离子体偏压到衬底来沉积膜的第二层，以增强等离子体的溅射效应。 在优选实施例中，沉积膜是氧化硅膜，并且通过将来自RF发生器的电容耦合的RF功率施加到顶板电极和晶片支撑电极来执行偏置。

公开(公告)号：US07132134B2

公开(公告)日：2006-11-07

申请号：US10938174

申请日：2004-09-10

Applicant: Kent Rossman

Inventor： Kent Rossman

IPC: H05H1/24

CPC classification number: C23C16/45523 ,  C23C16/045 ,  C23C16/402 ,  C23C16/4482 ,  C23C16/45561 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32302 ,  H01J37/32449 ,  H01J37/32862 ,  H01J37/3299 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31051 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/76837

Abstract: A method and apparatus for depositing a conformal dielectric layer employing a dep-etch technique features selectively reducing the flow of deposition gases into a process chamber where a substrate having a stepped surface to be covered by the conformal dielectric layer is disposed. By selectively reducing the flow of deposition gases into the process chamber, the concentration of a sputtering gas, from which a plasma is formed, in the process chamber is increased without increasing the pressure therein. It is preferred that the flow of deposition gases be periodically terminated so as to provide a sputtering gas concentration approaching 100%. In this fashion, the etch rate of a conformal dielectric layer having adequate gap-filling characteristics may be greatly increased, while allowing an increase in the deposition rate of the same.

公开(公告)号：US06846742B2

公开(公告)日：2005-01-25

申请号：US10463703

申请日：2003-06-16

Applicant: Kent Rossman

Inventor： Kent Rossman

IPC: C23C16/44 ,  C23C30/00 ,  G01Q30/16 ,  G01Q30/20 ,  H01J37/32 ,  H01L21/316 ,  H01L21/768 ,  H01L21/44

CPC classification number: H01J37/32477 ,  C23C16/4404 ,  C23C30/00 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76801 ,  Y10S438/905 ,  Y10S438/913

Abstract: Embodiments of the present invention include a method of depositing an improved seasoning film. In one embodiment the method includes, prior to performing a substrate processing operation, forming a layer of silicon over an interior surface of the substrate processing chamber as opposed to a layer of silicon oxide. In certain embodiments, the layer of silicon comprises at least 70% atomic silicon, is deposited from a high density silane (SinH2n+2) process gas and/or is deposited from a plasma having a density of at least 1×1011 ions/cm3.

Abstract translation: 本发明的实施例包括沉积改进的调味膜的方法。 在一个实施例中，该方法包括在执行基板处理操作之前，在与氧化硅层相反的基板处理室的内表面上形成硅层。 在某些实施方案中，硅层包含至少70％的原子硅，由高密度硅烷（SinH2n + 2）工艺气体沉积和/或从密度为至少1×10 11个/ cm 3。

公开(公告)号：US06704913B2

公开(公告)日：2004-03-09

申请号：US10291166

申请日：2002-11-08

Applicant: Kent Rossman

Inventor： Kent Rossman

IPC: G06F1750

CPC classification number: C23C16/0209 ,  C23C14/022 ,  C23C16/0245 ,  H01J2237/022

Abstract: A substrate processing system and a computer-readable storage medium for directing operation of a substrate processing system are provided for preparing a substrate for processing. The substrate processing system has a chamber with a substrate receiving portion and systems equipped to implement plasma processes. The computer-readable storage medium has a program that directs operation of the systems. The substrate is positioned within the chamber in a location not on the substrate receiving portion. A gaseous flow is provided to the chamber, from which a plasma is struck to heat the substrate. After the substrate has been heated, it is moved to the substrate receiving portion for processing.

Abstract translation: 提供了用于引导基板处理系统的操作的基板处理系统和计算机可读存储介质，用于制备用于处理的基板。 基板处理系统具有具有基板接收部分的室和装备用于实现等离子体处理的系统。 计算机可读存储介质具有指导系统的操作的程序。 衬底位于不在衬底接收部分上的位置内的腔室内。 将气流提供到腔室，等离子体从该气体流过，以加热衬底。 在基板被加热之后，移动到基板接收部分进行处理。

公开(公告)号：US06559026B1

公开(公告)日：2003-05-06

申请号：US09579822

申请日：2000-05-25

Applicant: Kent Rossman ,  Zhuang Li ,  Young Lee

Inventor： Kent Rossman ,  Zhuang Li ,  Young Lee

IPC: H01L2176

CPC classification number: H01J37/321 ,  C23C16/045 ,  C23C16/402 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76229 ,  H01L21/76837

Abstract: A trench-fill material is deposited to fill a trench in a substrate disposed in a process chamber. An inert gas is introduced into the process chamber and a plasma is formed to heat the substrate to a preset temperature, which is typically the temperature at which deposition of the trench-fill material is to take place. The plasma is terminated upon reaching the preset temperature for the substrate. A process gas is then flowed into the process chamber without plasma excitation until the process gas flow and distribution achieve a generally steady state in the process chamber. A plasma is then formed to deposit the trench-fill material on the surface of the substrate and fill the trench. By establishing generally steady state conditions in the chamber prior to deposition, transient effects are reduced and more uniform deposition of the trench-fill material is obtained. The step of forming the plasma typically includes coupling source plasma energy into the process chamber at a total power density of at least about 15 Watts/cm2. The energy is inductively coupled into the process chamber by coupling a top coil with a top portion of the process chamber above the surface of the substrate and coupling a side coil with a side portion of the process chamber generally surrounding the side edge of the substrate. The top coil is powered at a top RF power level to produce a top power density and the side coil is-powered at a side RF power level to produce a side power density. The total RF power density is equal to the sum of the top and side power densities. The top power density and the side power density desirably have a ratio of at least about 1.5. The high source plasma power density generates a high ion density plasma and produces a more directional deposition, and a higher top power density relative to the side power density produces a more uniform plasma over the substrate, resulting in improved trench fill, particularly for aggressive trenches having aspect ratios of about 3:1 to 4:1. The process gas typically includes silicon, oxygen, and an inert component having a concentration of less than about 40%, by volume. In specific embodiments, the concentration of the inert component is equal to about 0%.

公开(公告)号：US20050032382A1

公开(公告)日：2005-02-10

申请号：US10938174

申请日：2004-09-10

Applicant: Kent Rossman

Inventor： Kent Rossman

IPC: C23C16/04 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/768 ,  H01L21/311 ,  H01L21/469 ,  H01L21/4763

CPC classification number: C23C16/45523 ,  C23C16/045 ,  C23C16/402 ,  C23C16/4482 ,  C23C16/45561 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32302 ,  H01J37/32449 ,  H01J37/32862 ,  H01J37/3299 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31051 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/76837

Abstract: A method and apparatus for depositing a conformal dielectric layer employing a dep-etch technique features selectively reducing the flow of deposition gases into a process chamber where a substrate having a stepped surface to be covered by the conformal dielectric layer is disposed. By selectively reducing the flow of deposition gases into the process chamber, the concentration of a sputtering gas, from which a plasma is formed, in the process chamber is increased without increasing the pressure therein. It is preferred that the flow of deposition gases be periodically terminated so as to provide a sputtering gas concentration approaching 100%. In this fashion, the etch rate of a conformal dielectric layer having adequate gap-filling characteristics may be greatly increased, while allowing an increase in the deposition rate of the same.

Abstract translation: 使用去蚀刻技术沉积保形介电层的方法和装置特征在于选择性地减少沉积气体流入处理室，其中设置具有被保形电介质层覆盖的台阶表面的基板。 通过选择性地减少沉积气体进入处理室的流量，在处理室中从其中形成等离子体的溅射气体的浓度增加而不增加其中的压力。 沉积气体的流动优选地周期性地终止，以提供接近100％的溅射气体浓度。 以这种方式，可以大大增加具有足够的间隙填充特性的保形介电层的蚀刻速率，同时允许其沉积速率的增加。