发明授权
US06706648B2 APCVD method of forming silicon oxide using an organic silane, oxidizing agent, and catalyst-formed hydrogen radical
有权
使用有机硅烷，氧化剂和催化剂形成的氢根形成氧化硅的APCVD方法
- 专利标题： APCVD method of forming silicon oxide using an organic silane, oxidizing agent, and catalyst-formed hydrogen radical
- 专利标题（中）： 使用有机硅烷，氧化剂和催化剂形成的氢根形成氧化硅的APCVD方法
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申请号： US10037865申请日： 2001-10-24
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公开(公告)号： US06706648B2公开(公告)日： 2004-03-16
- 发明人: Shunpei Yamazaki , Mitsunori Sakama , Takeshi Fukada
- 申请人： Shunpei Yamazaki , Mitsunori Sakama , Takeshi Fukada
- 优先权： JP7-256969 19950908; JP7-262519 19950916
- 主分类号： H01L2131
- IPC分类号： H01L2131
摘要：
In forming various types of insulating films in manufacture of a semiconductor device, carbon is gasified into CHx, COH etc. during film formation by adding active hydrogen and nitrogen oxide to reduce the carbon content during the film formation, and the effect of blocking impurities such as alkali metals is improved.
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