发明授权
- 专利标题： Method of providing semiconductor interconnects using silicide exclusion
- 专利标题（中）： 使用硅化物排除提供半导体互连的方法
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申请号： US10285235申请日： 2002-10-31
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公开(公告)号： US06707117B1公开(公告)日： 2004-03-16
- 发明人: Vladislav Vashchenko , Peter J. Hopper , Philipp Lindorfer , Andy Strachon , Peter Johnson
- 申请人： Vladislav Vashchenko , Peter J. Hopper , Philipp Lindorfer , Andy Strachon , Peter Johnson
- 主分类号： H01C2976
- IPC分类号： H01C2976
摘要：
In a semiconductor structure, interconnects between regions of a single device or different devices are achieved by forming metal plugs that span across the regions to be interconnected, wherein the plugs are formed from the metal used in forming a silicide layer on the structure. The metal is masked off in desired areas prior to etching, to leave the metal plugs.
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