公开(公告)号：US06707117B1

公开(公告)日：2004-03-16

申请号：US10285235

申请日：2002-10-31

Applicant: Vladislav Vashchenko ,  Peter J. Hopper ,  Philipp Lindorfer ,  Andy Strachon ,  Peter Johnson

Inventor： Vladislav Vashchenko ,  Peter J. Hopper ,  Philipp Lindorfer ,  Andy Strachon ,  Peter Johnson

IPC: H01C2976

CPC classification number: H01L21/28518 ,  H01L21/76889 ,  H01L21/76895 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a semiconductor structure, interconnects between regions of a single device or different devices are achieved by forming metal plugs that span across the regions to be interconnected, wherein the plugs are formed from the metal used in forming a silicide layer on the structure. The metal is masked off in desired areas prior to etching, to leave the metal plugs.

Abstract translation: 在半导体结构中，单个器件或不同器件的区域之间的互连通过形成跨越要互连的区域的金属插塞来实现，其中插塞由在结构上形成硅化物层所用的金属形成。 在蚀刻之前，将金属掩盖在所需区域中，以留下金属塞。