发明授权
- 专利标题: Method for manufacturing semiconductor device
- 专利标题(中): 制造半导体器件的方法
-
申请号: US09939770申请日: 2001-08-28
-
公开(公告)号: US06713401B2公开(公告)日: 2004-03-30
- 发明人: Kenetsu Yokogawa , Yoshinori Momonoi , Kazunori Tsujimoto , Shinichi Tachi
- 申请人: Kenetsu Yokogawa , Yoshinori Momonoi , Kazunori Tsujimoto , Shinichi Tachi
- 优先权: JP2001-007158 20010116
- 主分类号: H01L2100
- IPC分类号: H01L2100
摘要:
Disclosed is a method for manufacturing a semiconductor device which efficiently carries out a process on a semiconductor substrate, such as dry etching, and cleaning for removing a foreign matter after the process. The method includes a step of removing a foreign matter by using both an electric action of a plasma generated by plasma generation means and a physical action caused by a frictional stress of a fast gas stream formed by a pad structure which is arranged close to a wafer surface.
公开/授权文献
- US20020094691A1 Method for manufacturing semiconductor device 公开/授权日:2002-07-18