发明授权
- 专利标题： Method of forming transparent, conductive film, method of compensating defective region of semiconductor layer, photovoltaic element, and method of producing photovoltaic element
- 专利标题（中）： 形成透明导电膜的方法，补偿半导体层的缺陷区的方法，光电元件以及生产光电元件的方法
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申请号： US10058802申请日： 2002-01-30
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公开(公告)号： US06716324B2公开(公告)日： 2004-04-06
- 发明人: Toshihiro Yamashita , Yasuyoshi Takai , Hiroshi Izawa
- 申请人： Toshihiro Yamashita , Yasuyoshi Takai , Hiroshi Izawa
- 优先权： JP2001-025061 20010201
- 主分类号： C23C1434
- IPC分类号： C23C1434
摘要：
Provided is a method of forming a transparent, conductive film on a semiconductor layer formed on a substrate, by sputtering, wherein voltages are applied independently of each other to both a target and the substrate, respectively, and a bias voltage appearing in the substrate is controlled so as to form the transparent, conductive film on only a portion except for a defective region of the semiconductor layer, thereby restraining shunting of the transparent, conductive film and achieving excellent appearance thereof. Also provided are a defective region compensation method of a semiconductor layer, a photovoltaic element, and a method of producing the photovoltaic element.
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