Invention Grant
- Patent Title: Method for depositing silicon oxide incorporating an outgassing step
- Patent Title (中): 包含放气步骤的沉积氧化硅的方法
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Application No.: US09974584Application Date: 2001-10-09
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Publication No.: US06716740B2Publication Date: 2004-04-06
- Inventor: Shih-Ming Wang , Long-Shang Chuang , Jui-Ping Chuang , Chin-Hsiung Ho , Mei-Yen Li , Chien-Kang Chou
- Applicant: Shih-Ming Wang , Long-Shang Chuang , Jui-Ping Chuang , Chin-Hsiung Ho , Mei-Yen Li , Chien-Kang Chou
- Main IPC: H01L214763
- IPC: H01L214763

Abstract:
A method for depositing an inter-metal-dielectric layer on a semiconductor substrate by plasma chemical vapor deposition without the layer cracking defect is disclosed. The semiconductor substrate is first heat-treated in the same plasma process chamber to a temperature of at least 300° C. for a length of time sufficient to outgas a surface of the semiconductor substrate. The impurity gases absorbed on the surface of the semiconductor substrate can be effectively outgassed during the heat treatment process such that they are not trapped under an IMD layer deposited in a subsequent plasma deposition process. The method effectively minimizes or eliminates completely the IMD layer cracking defect of the dielectric layer.
Public/Granted literature
- US20030068902A1 Method for depositing silicon oxide incorporating an outgassing step Public/Granted day:2003-04-10
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